Theoretical study of electron transport in gallium nitride

Mansour, Nabil S.; Littlejohn, M. A.

doi:10.1063/1.358696

Cited by 91 publications

(39 citation statements)

References 14 publications

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“…4 is in a range of 10 4 -10 6 cm −2 , which is the lowest ever reported. simulations [19][20][21]23,27 and actual measurement. 33,34 The curves show two distinct regions across a peak drift velocity signifying the migration of electron into the higher M-L valleys for high electric fields.…”

Section: A Forward Conductionmentioning

confidence: 99%

“…Different Monte Carlo calculation methods like the full potential linearized augmented plane wave (FLAPW), 12 orthogonalized linear combination of atomic orbitals (OLCAO) 13 or the empirical pseudo potential method (EPM) 14 are used to determine the band structure and hole and electron effective masses. 12,[14][15][16][17] Similar Monte Carlo calculations are performed to determine the bulk electron [18][19][20][21][22][23][24][25][26][27] and hole [28][29][30][31] mobility employing different band structure and scattering mechanisms. Although experimentally determined values of electron mobility [32][33][34][35] are reported there are few available experimental data for hole mobility.…”

Section: Introductionmentioning

confidence: 99%

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Modeling and simulation of bulk gallium nitride power semiconductor devices

et al. 2016

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Bulk gallium nitride (GaN) power semiconductor devices are gaining significant interest in recent years, creating the need for technology computer aided design (TCAD) simulation to accurately model and optimize these devices. This paper comprehensively reviews and compares different GaN physical models and model parameters in the literature, and discusses the appropriate selection of these models and parameters for TCAD simulation. 2-D drift-diffusion semi-classical simulation is carried out for 2.6 kV and 3.7 kV bulk GaN vertical PN diodes. The simulated forward current-voltage and reverse breakdown characteristics are in good agreement with the measurement data even over a wide temperature range.

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Section: A Forward Conductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Modeling and simulation of bulk gallium nitride power semiconductor devices

et al. 2016

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“…Gelmont et al (1993) reported on ensemble two-valley Monte Carlo simulations of the electron transport within bulk wurtzite GaN. Mansour et al (1995) reported the use of such an approach in order to determine how the crystal temperature influences the velocity-field characteristic associated with bulk wurtzite GaN. Kolník et al (1995) reported on employing full-band Monte Carlo simulations of the electron transport within bulk wurtzite GaN and bulk zincblende GaN.…”

Section: Introductionmentioning

confidence: 99%

Monte Carlo Study of the Dynamic Screening Effect in Doped GaN

El-Ela¹,

Mohamed²

2013

APR

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Monte Carlo simulations of hot electron transport in n-type GaN when the interaction of the electrons with polar optical phonons is dynamically screened shows the effects of antiscreening at carrier densities of (1-5)x10 24 m -3 . At these densities full coupling between the Plasmon-phonon systems could be ignored to a first approximation together with degeneracy. Our calculations used the Lindhard formalism with Fermi-Dirac distribution and with neglecting the collisional damping when dynamic screened electron phonons scattering rates calculated. The screened scattering rate is strongly enhanced at low electron temperature and high carrier concentrations due to antiscreening property of inverse dielectric function. Antiscreening delays runaway and intervalley transfer to higher valleys. The peak drift velocity is enhanced and as result, so is the peak valley ratio.

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“…[1][2][3][4][5]). Meanwhile, such basic properties of the nitrides such as relatively low effective masses, high optical phonon energies, strong electron-optical phonon interaction and large energy separations of the upper valleys bring about a number of new hot electron effects in moderate electric fields.…”

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confidence: 99%

Group-III Nitrides Hot Electron Effects in Moderate Electric Fields

Barry

Kochelap

2001

phys. stat. sol. (b)

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We studied the distribution function and basic characteristics of hot electrons in InN, GaN and AlN under moderate electric fields, and found that in relatively low fields (of the order of kV/cm) the optical phonon emission dominates the electron kinetics. This strongly inelastic process gives rise to a spindle-shaped distribution function and an extended portion of quasi-saturation of the current-voltage characteristics (the streaming-like regime). We prove that this hot electron regime holds for all three nitrides. We suggest that the effects can be detected by the measurement of the I -V characteristics, or the thermopower of hot electrons in the transverse direction.Introduction Recent intensive studies of the electron kinetics in group-III nitride materials are mostly focused on two subjects: the problem of the low-field mobility and the problem of the peak (saturation) velocity in extremely high electric fields (hundreds of V/cm, see Refs. [1][2][3][4][5]). Meanwhile, such basic properties of the nitrides such as relatively low effective masses, high optical phonon energies, strong electron-optical phonon interaction and large energy separations of the upper valleys bring about a number of new hot electron effects in moderate electric fields. These effects can be of interest for both the understanding of fundamentals of the electron kinetics in the nitrides and their applications. This paper addresses the hot electron kinetics in group-III nitrides at moderate electric fields.

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Theoretical study of electron transport in gallium nitride

Abstract: Articles you may be interested inA detailed characterization of the transient electron transport within zinc oxide, gallium nitride, and gallium arsenide

Cited by 91 publications

References 14 publications

Modeling and simulation of bulk gallium nitride power semiconductor devices

Modeling and simulation of bulk gallium nitride power semiconductor devices

Monte Carlo Study of the Dynamic Screening Effect in Doped GaN

Group-III Nitrides Hot Electron Effects in Moderate Electric Fields

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