Theoretical Study of Excess Si Emitted from Si-oxide/Si Interfaces

Kageshima, Hiroyuki; Uematsu, Masahi; Akagi, Kazuto; Tsuneyuki, Shinji; Akiyama, Toru; Shiraishi, Kenji

doi:10.1143/jjap.43.8223

Cited by 19 publications

(12 citation statements)

References 28 publications

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“…According to Kageshima etal., the Si emission is a major cause for the missing Si [20][21][22][23][24][25][26][27][28][29]. It is * Corresponding author: efukuda@cies.tohoku.ac.jp also reported that the amount of Si emission is larger in the pillar-shape Si oxidation than in the planar Si oxidation, where the emission becomes more prominent as the Si pillar diameter becomes smaller.…”

Section: Introductionmentioning

confidence: 99%

Influence of Oxygen Concentration of Si Wafer Surface in Si Emission on Nano Ordered Three-Dimensional Structure Devices

Fukuda

Endoh

Ishikawa

et al. 2017

e-J. Surf. Sci. Nanotech.

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In past studies, the Si emission phenomenon is one of the issues for fabrication of 3D structure devices such as FinFETs and Vertical MOSFETs. In this paper, it is found that novel Si emission phenomena depending on the surface oxygen concentration of Si wafer occur, when Si pillars patterned less than 100 nm are oxidized. A wafer with high oxygen concentration which is over 1.0×1018 atoms/cm 3 can suppress Si emission from the Si pillar compared to the low oxygen concentration wafers which are less than 1.0×1017 atoms/cm 3 . The difference of oxygen concentration in the Si substrate is expected to largely depend on the behavior of oxygen atom in the Si wafer before and after oxidation. In case of an oxygen concentration ratio exceeding the solid solubility of Si, oxygen diffuses outward from the Si substrate after oxidation, whereas oxygen diffuses inward when the concentration is below the solid solubility. It was also found that the larger the degree of injection of oxygen into the Si substrate after oxidation, the larger the emission amount of Si from the Si pillar. Finally, we discuss the mechanism of above experimental Si emission phenomena in nanoscale Si pillar with previous first principle model of silicon oxidation process.

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Section: Introductionmentioning

confidence: 99%

Influence of Oxygen Concentration of Si Wafer Surface in Si Emission on Nano Ordered Three-Dimensional Structure Devices

Fukuda

Endoh

Ishikawa

et al. 2017

e-J. Surf. Sci. Nanotech.

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“…This happens because of the segregation of B atoms into the surface oxide layer during thermal oxidation . The normal oxidation at high temperature of 900 °C introduces Si self-interstitials into crystalline Si core of SiNWs. − These two effects, high temperature annealing and introduction of defects, enhance the segregation of B atoms into the surface oxide layer. Figure c shows the comparison between the normal oxidation and the ozone oxidation at 600 °C in addition to the data obtained for the normal oxidation at 900 °C.…”

Section: Resultsmentioning

confidence: 99%

Interaction of Boron and Phosphorus Impurities in Silicon Nanowires during Low-Temperature Ozone Oxidation

et al. 2013

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In doped Si nanowires (SiNWs) boron (B) atoms segregate to the surface oxide layers during thermal oxidation, while phosphorus (P) atoms preferentially pile up in Si crystalline regions close to the Si/SiO2 interface. Here we report on micro-Raman scattering and electron spin resonance (ESR) measurements showing that B atoms can be stabilized at the crystalline Si core region in codped SiNWs with average diameters of 20–30 nm because of the strong interaction between B and P atoms during thermal oxidation below 800 °C. Theoretical calculation clearly demonstrated the effect of B–P pairing, which can stabilize the B atoms in the Si side. In the B–P pairing configuration, dopant passivationbeyond simple compensationoccurs, making the impurities electrically inactive.

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“…In addition to this, enhanced B diffusion during oxidation is a possible reason for the fast segregation of B atoms. It is well-known that dopant diffusion is enhanced under an oxidizing ambient. − This phenomenon is called transient enhanced diffusion (TED) or oxidation-enhanced diffusion (OED). − Silicon self-interstitials are generated at the Si/SiO 2 interface during oxidation. − B atoms are generally accepted to diffuse in Si crystal predominantly by a kick-out mechanism that involves Si self-interstitials . A Si interstitial kicks out the substitutional B atom to an interstitial position where it can diffuse easily.…”

mentioning

confidence: 99%

“…[27][28][29][30][31] Silicon self-interstitials are generated at the Si/SiO 2 interface during oxidation. [27][28][29][30][31][32][33] B atoms are generally accepted to diffuse in Si crystal predominantly by a kick-out mechanism that involves Si self-interstitials. 34 A Si interstitial kicks out the substitutional B atom to an interstitial position where it can diffuse easily.…”

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confidence: 99%

Segregation Behaviors and Radial Distribution of Dopant Atoms in Silicon Nanowires

Fukata¹,

Ishida²,

Yokono³

et al. 2011

Nano Lett.

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Gaining an understanding the dynamic behaviors of dopant atoms in silicon nanowires (SiNWs) is the key to achieving low-power and high-speed transistor devices using SiNWs. The segregation behavior of boron (B) and phosphorus (P) atoms in B- and P-doped SiNWs during thermal oxidation was closely observed using B local vibrational peaks and Fano broadening in optical phonon peaks of B-doped SiNWs by micro-Raman scattering. Electron spin resonance (ESR) signals from conduction electrons were used for P-doped SiNWs. Our results showed that B atoms preferentially segregate in the surface oxide layer, whereas P atoms tend to accumulate in the Si region around the interface of SiNWs. The radial distribution of P atoms in SiNWs was also investigated to prove the difference segregation behaviors between of P and B atoms.

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Theoretical Study of Excess Si Emitted from Si-oxide/Si Interfaces

Cited by 19 publications

References 28 publications

Influence of Oxygen Concentration of Si Wafer Surface in Si Emission on Nano Ordered Three-Dimensional Structure Devices

Influence of Oxygen Concentration of Si Wafer Surface in Si Emission on Nano Ordered Three-Dimensional Structure Devices

Interaction of Boron and Phosphorus Impurities in Silicon Nanowires during Low-Temperature Ozone Oxidation

Segregation Behaviors and Radial Distribution of Dopant Atoms in Silicon Nanowires

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