Theoretical Study of Piezo‐phototronic Nano‐LEDs

Abstract

Two-dimensional finite-element simulation of the piezo-phototronic effect in p-n-junction-based devices is carried out for the first time. A charge channel can be induced at the p-n junction interface when strain is applied, given the n-side is a piezoelectric semiconductor and the p-type side is non-piezoelectric semiconductor. This provides the first simulated evidence supporting the previously suggested mechanism responsible for the experimentally observed gigantic change of light-emission efficiency in piezo-phototronic light-emitting devices.

Enhanced emission intensity of vertical aligned flexible ZnO nanowire/p-polymer hybridized LED array by piezo-phototronic effect

“…In our previous work, we have demonstrated that piezophototronic effect can be utilized to largely enhance light emitting intensity (to $ 200%) of a single ZnO wire inorganic/ organic hybrid LED [12], and the results are well supported by a theory proposed for piezo-phototronics for studying the photon emission at a p-n junction with the presence of local piezoelectric charges [13][14][15][16][17][18]. However, the piezo-phototronic effect has not been demonstrated in a vertical aligned ZnO wire inorganic/organic hybrid LEDs array, which have greater application than a single lateral NW LED in future.…”

Ultrafast Response p‐Si/n‐ZnO Heterojunction Ultraviolet Detector Based on Pyro‐Phototronic Effect

“…Both the conduction and valence band of ZnO at the interface of pn junction increase as a result based on Anderson's model (Figure 1e). [25,28] Therefore, the charge carriers' transport across the heterojunction is significantly enhanced during this process and hence a transient high output current is observed from the measurements (Figure 2a). The temperature variation vanishes rapidly, [22] and the photocurrent gradually stabilizes at some certain value due to the relatively slow photoexcitation process.…”

“…The conduction and valence band of ZnO decrease and form a "carrier trap" effect due to positive pyropolarizations as shown in Figure 1f. [25,28] Such "trap" greatly hinders the carriers' transport across the pn junction and the dark current is greatly reduced. Moreover, since the pyroelectric …”

Progress in piezo-phototronic effect enhanced photodetectors

“…70 The strain modulation on the p-n junction could be explained through the width change of the depletion zone and the band diagram deformation. 71 Take a light-illuminated p-n junction with an n-type piezoelectric semiconductor as an example. Negative polarization charge will be introduced at the interface in the n-type side (Fig.…”