Theory and Design of Electron Blocking Layers for III-N-Based Laser Diodes by Numerical Simulation

Philosophy of Approaching a Laser Design Problem: Illustrated by the Design of Ultraviolet Vertical‐Cavity Laser Diodes

“…Such a situation arises in the study of EBLs and p-CSLs at low input currents where self-heating is negligible. [15,16] In this and similar ways, an understanding of both the physics and the software can reduce individual simulation times from days to hours, and dramatically shorten the time required to design a laser. Not all of the physics needs to be considered for every sub-problem.…”

“…A detailed discussion on the polarization charge in III-N materials can be found by Ambacher et al [22] Interfacial polarization charge has deleterious effects on the performance of III-N light emitting devices due to two primary reasons-1) reduction of the QW gain by reducing the overlap between bound electron and hole wavefunctions, and 2) reducing the device's injection efficiency by exacerbating electron leakage. [15] The Quantum-confined Stark Effect is discussed in more detail by Ryou et al [18]…”

“…Absorption coefficient versus wavelength for an ITO film measured by Lai et al [49] and Konig et al [50] Reproduced with permission. [16] Copyright 2018, IEEE. Strategies to reduce the optical loss in the contact layers are reviewed in Section 3.4.1, where a modulation-doped shortperiod superlattice (MD-SPSL) has been proposed as a lateral hole CSL instead of ITO for UV-VCSELs.…”

“…Strategies to reduce the optical loss in the contact layers are reviewed in Section 3.4.1, where a modulation-doped shortperiod superlattice (MD-SPSL) has been proposed as a lateral hole CSL instead of ITO for UV-VCSELs. [16] Alternative strategies to obtain a high reflectivity bottom DBR are discussed in Section 3.4.2, where a hybrid epitaxial and metal mirror is proposed-an epitaxial DBR to provide a reflectivity of >90% and a planar metal mirror underneath provides the remaining 90% reflectivity. [17]…”

“…We find that the optimum EBL design strongly depends on the device's intended operating current density, and thus we find different optimum EBL designs for LEDs, edge-emitting LDs, and VCSELs. [15] Section 3.4.3 briefly describes epitaxial design techniques to stem electron leakage, and provides general guidelines on optimum EBL design for a III-N light-emitting device.…”