Theory of Optical Magneto-Absorption Effects in Semiconductors

Roth, Laura M.; Lax, B.; Zwerdling, S.

doi:10.1103/physrev.114.90

Cited by 701 publications

(274 citation statements)

References 22 publications

Supporting

Mentioning

239

Contrasting

Unclassified

Order By: Relevance

“…5 for a spherical, unstrained InAs nanocrystal, by showing that the electron g factor approached the bare electron value of ∼ 2 much more quickly than would be expected from a parametrized bulk model based on Ref. 6. A similar quenching effect on the orbital angular momentum should reduce the diamagnetic coefficient in small quantum dots with large barriers.…”

Section: Introductionmentioning

confidence: 98%

See 1 more Smart Citation

gfactors and diamagnetic coefficients of electrons, holes, and excitons in InAs/InP quantum dots

et al. 2012

View full text Add to dashboard Cite

The electron, hole, and exciton g factors and diamagnetic coefficients have been calculated using envelopefunction theory for cylindrical InAs/InP quantum dots in the presence of a magnetic field parallel to the dot symmetry axis. A clear connection is established between the electron g factor and the amplitude of those valence-state envelope functions that possess nonzero orbital momentum associated with the envelope function. The dependence of the exciton diamagnetic coefficients on the quantum dot height is found to correlate with the energy dependence of the effective mass. Calculated exciton g factor and diamagnetic coefficients, constructed from the values associated with the electron and hole constituents of the exciton, match experimental data well, however including the Coulomb interaction between the electron and hole states improves the agreement. Remote-band contributions to the valence-band electronic structure, included perturbatively, reduce the agreement between theory and experiment.

show abstract

Section: Introductionmentioning

confidence: 98%

“…(4)- (6). Since in the experiment the Zeeman energy was found to be linear with magnetic field, we have only taken the g 0 v factor into account, which is exactly valid for small magnetic fields.…”

Section: Comparison With Experimentsmentioning

confidence: 99%

gfactors and diamagnetic coefficients of electrons, holes, and excitons in InAs/InP quantum dots

et al. 2012

View full text Add to dashboard Cite

show abstract

“…(22) in the second term of Eq. (20), keeping only the z-components, we obtain terms in the energy which involve a factor of the type…”

Section: The Influence Of the Spin Orbit Couplingmentioning

confidence: 99%

“…Note that one way of calculating the g-shift, when we have weak disorder, is to use the Kohn-Luttinger wavefunctions. One can compute the g-shift ∆g k,α in the exact band states 22 .…”

Section: The Influence Of the Spin Orbit Couplingmentioning

confidence: 99%

Hall conductivity in the presence of spin-orbit interaction and disorder

Arsenault

Movaghar

2008

Phys. Rev. B

View full text Add to dashboard Cite

Starting from the Kubo formula, we expand the Hall conductivity using a cumulant approach which converges quickly at high temperatures (kBT > energy differences of initial and final scattering states) and can be extended to low temperatures. The theory can deal with the sign, the ordinary and the anomalous contributions to the Hall effect. When applied to include the spin-orbit interaction to first order, we recover what is essentially the Karplus-Luttinger result for the anomalous Hall effect. Contact is made to the Chazalviel and Nozières-Lewiner formulae. A side-jump type formula is obtained by using an exact application of linear response. We show that there exists an exact rigid Hall current which is not a Fermi level property. We introduce a relationship between mass and diffusivity which allows us to generalize the theory to strong disorder and even introduce a mobility edge. The formalism provides a systematic and practical way of analyzing both ordinary and anomalous contributions to the Hall conduction including the changes of sign, and in the presence of serious disorder. As a byproduct of the method, we show that the anomalous Hall coefficient can vary with resistance to the power n, with 1 ≤ n ≤ 2 depending on the degree of coherence.

show abstract

“…In bulk systems, the value of the g factor is strongly influenced by band mixing, spin-orbit interaction and crystal anisotropy. 4 In the last years, there is increasing interest in controlling and exploiting the g factor of carriers confined in semiconductor quantum dots (QDs) for spin preparation, conservation and manipulation aiming at spintronic and quantum information devices. [5][6][7][8][9][10] The magnetism of these structures is significantly different from that of bulk crystals because the weak magnetic confinement is supplemented by a strong spatial confinement.…”

Section: Introductionmentioning

confidence: 99%

Magnetic field implementation in multibandk⋅pHamiltonians of holes in semiconductor heterostructures

Planelles

Climente

2013

J. Phys.: Condens. Matter

View full text Add to dashboard Cite

We propose an implementation of external homogeneous magnetic fields in k•p Hamiltonians for holes in heterostructures, in which we made use of the minimal coupling prior to introduce the envelope function approximation. Illustrative calculations for holes in InGaAs quantum dot molecules show that the proposed Hamiltonian outperforms standard Luttinger model [Physical Review 102, 1030(1956] describing the experimentally observed magnetic response. The present implementation culminates our previous proposal [Phys. Rev. B 82, 155307 (2010)].

show abstract

Theory of Optical Magneto-Absorption Effects in Semiconductors

Cited by 701 publications

References 22 publications

gfactors and diamagnetic coefficients of electrons, holes, and excitons in InAs/InP quantum dots

gfactors and diamagnetic coefficients of electrons, holes, and excitons in InAs/InP quantum dots

Hall conductivity in the presence of spin-orbit interaction and disorder

Magnetic field implementation in multibandk⋅pHamiltonians of holes in semiconductor heterostructures

Contact Info

Product

Resources

About