Theory of optimum design of reverse-biased p-n junctions using resistive field plates and variation lateral doping

Variation of Lateral Thickness techniques in SOI lateral high voltage transistors

“…Therefore, the complicated linear thickness can be replaced by the single-or two-step thickness due to the simplification in design and fabrication, efficient cost, and negligible deterioration in performance. (2) As shown in Fig. 7, the steps and linear drift thicknesses can result in a much higher breakdown voltage compared to the conventional device.…”

Design and optimization of a novel SOI LDMOS structure using PIN junction

“…The breakdown voltages of conventional Sal LOMaS with different drift region doping concentration are plotted in Fig. 6 This novel structure can be explained as a compromise of LDMOS with linear doping drift region [5], [6], [7]. Linear doping can increase breakdown voltage and make surface field closer to uniform distribution, but requires complex manufacturing process.…”

Characterization and Fabrication of the CFM-JTE for 4H-SiC Power Device with High-Efficiency Protection and Increased JTE Dose Tolerance Window

“…The decrease in Q i along the terminal outer edge effectively achieves the electric field modulation in the terminal region. Consequently, through the mechanism and effect of charge electric field modulation, CFM-JTE availably overcomes the deficiency of low diffusion coefficient of SiC to form the varied lateral doping (VLD) effect, which is a highly effective, robust and mature junction terminal protection technology for Si devices [12,13]. The ring width (w r ) of each group is decreased to 15 μm, 12 μm and 9 μm, respectively.…”