Theory of pulse propagation and four-wave mixing in a quantum dot semiconductor optical amplifier

Flayyih, Ahmed H.; Al-Khursan, Amin H.

doi:10.1016/j.cap.2014.04.014

Cited by 5 publications

(4 citation statements)

References 28 publications

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“…As expected the behave in QD SOA, where the carrier density and occupation are increase with a long life time of CH relaxation, and then the collision of carrier in wetting layer will raise the carrier temperature [12]. We refer that; the results in figures (8)(9)(10)(11)(12) are in agreement with literatures [4, 10, and 16].…”

Section: Carrier Temperature In Qwsupporting

confidence: 89%

“…The effect of Ne--type ionized donor per QW layer on the carrier temperature is studied in figure (8), with increases carrier concentration, the collusion between the carrier will be increase, and then it will cause the raise carrier temperature as shown in figure (9).`Free carrier absorption is considered a very effective source in CH effects, the carrier temperature is straightforward with  fca as shown in figure (10). The contribution of carrier heating that is represented by carrier heating relaxation is studied in figure (11).…”

Section: Carrier Temperature In Qwmentioning

confidence: 99%

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Carrier dynamic and carrier Temperature in Quantum Well

Musa¹,

Flayyih²

2022

UTJsci

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Carrier temperature in quantum well (QW)semiconductor optical amplifier (SOA) has been studied,depending density matrix theory (DMT) and carrier dynamicin quantum well. The effect of volume carrier density, dopingon effect, pulse shape, nonradiative relaxation, and nonlineargain coefficients on the carrier temperature and carrierheating has been investigated. The theoretical results showthat; the time recovery increases straightforward withnonradiative recombination, where the relaxation time ofnonradiative recombination reduces the rate of carrieroccupation in quantum states. Also, the carrier temperatureincreases with carrier density, free carrier absorption, carrierheating lifetime and reduces with pulse shape of pump pulses

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Section: Carrier Temperature In Qwsupporting

confidence: 89%

Section: Carrier Temperature In Qwmentioning

confidence: 99%

Carrier dynamic and carrier Temperature in Quantum Well

Musa¹,

Flayyih²

2022

UTJsci

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“…The effect of the pulse shape introduced in the SOA represented by the full width at half maximum (FWHM) is also studied as shown in Figure 5. Since increasing the FWHM of the Gaussian pulse increases its time recovery 20,21 . The shape of the curves access the reality.…”

Section: Resultsmentioning

confidence: 88%

Effect of time relaxations on the carrier heating of InAs/GaAs quantum dot semiconductor optical amplifier

Flayyih

Mohammed

Al-Khursan

2020

Micro & Optical Tech Letters

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Carrier temperature in InAs quantum dot (QD) optical amplifiers has been formalized theoretically by using the double‐excited states system. High current injection gives high carrier temperature and a punch in the curve appears at low current due to the ground state carrier contribution. Increasing carrier‐heating time increased carrier temperature. It is shown the slow relaxation for both the wetting layer to QD and the interdot relaxations are given high carrier temperature. Pulses with wide full width at half‐maximum give high carrier temperature since its recovery time is increased. Free carrier absorption gives a main contribution to the heat in the QD structure.

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“…QDs present one of the most promising nanomaterials that are exceptionally useful for a variety of new applications, ranging from optoelectronic devices to biological labels. [1][2][3][4][5][6][7][8] A major step toward the preparation of stable and highly luminescent QDs was carried out by Hines and Guyot-Sionnest. 9 They passivated the surface using an inorganic, wide band gap semiconductor capping shell, which enables passivation of surface trap states and increases photoluminescence (PL) quantum yields (QYs).…”

Section: Introductionmentioning

confidence: 99%

Facile synthesis and optimization of ZnSe–GSH quantum dots by hydrothermal method

Sun¹,

Gong²,

Zhou³

et al. 2015

mat express

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Water-soluble ZnSe quantum dots (QDs) with high luminescence were synthesized by a simple hydrothermal method using selenium powder and zinc acetate solution as precursors, and L-glutathione (GSH) as a stabilizer. In addition, the photoluminescence properties of ZnSe QDs under different conditions (precursor ratios, precursor solution pH, and hydrothermal temperature) were thoroughly investigated. The morphology and structure of as-synthesized ZnSe-GSH QDs under optimized experimental conditions were determined by HRTEM, XRD, and TG-DTA. Results showed that the ZnSe-GSH QDs were tiny nanocrystals with quasi-sphere particles of ∼3 nm size with core-shell structure. The formation and growth mechanism of the core-shell structure were discussed in detail. When the synthesis process was carried out under optimized hydrothermal conditions (reaction temperature, 140 C; reaction time, 45 min; pH value of precursor solution, 10.0; GSH-to-Zn mole ratio, 1.2; and Se-to-Zn mole ratio, 0.2), the as-synthesized ZnSe-GSH QDs emitted blue-purple fluorescence (375 nm) when excited at 321 nm.

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Theory of pulse propagation and four-wave mixing in a quantum dot semiconductor optical amplifier

Cited by 5 publications

References 28 publications

Carrier dynamic and carrier Temperature in Quantum Well

Carrier dynamic and carrier Temperature in Quantum Well

Effect of time relaxations on the carrier heating of InAs/GaAs quantum dot semiconductor optical amplifier

Facile synthesis and optimization of ZnSe–GSH quantum dots by hydrothermal method

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