Thermal activation parameters of V–5Cr–5Ti alloy under hot compression

Fully solution-induced high performance indium oxide thin film transistors with ZrOx high-k gate dielectrics

“…The small SS values for 300 C-annealed TFTs may be attributed to the large areal capacitance of the ZrO x dielectric layer and the electronic-clean interface between In 2 O 3 and ZrO x . 15,25 Based on the optimized electrical performance parameters, it can be noted that the m sat of In 2 O 3 TFTs based on ZrO x dielectric has been signicantly enhanced by a factor of 7 compared to that of based on SiO 2 dielectric. The sharp increase in m sat comes from the electronic-free interface and high capacitance density of ZrO x dielectric layer.…”

“…It has been shown that the carrier mobility and transport properties of TFTs, derived from solution-processed methods, are strongly dependent on the preparation condition, including annealing conditions and the precursor solution concentration. 15,25,31 However, the annealing temperature modulated electrical properties of the fully solution-processed oxide TFTs is not investigated systematically before. In current work, we demonstrate a fully solution-processed method, a simple and large-area-compatible deposition technique, which can be used for the processing of high-quality ZrO 2 dielectric and In 2 O 3 channel layer onto Si substrates.…”

Indium and Tin Doping of Zinc Oxide Film by Cation Exchange and its Application to Low‐Temperature Thin‐Film Transistors

“…[ 38,39,55 ] Remarkably, the XRD pattern of the IZO film is considerably similar to that of the ZnO film, indicating that the state of the IZO film immediately after the cation‐exchange process is such that its crystallization requires relatively mild annealing (250 °C for 1 h). This attractive feature, which differentiates cation‐exchange doping from other solution processes based on the precursors of metal acetates, [ 21–23 ] nitrates, [ 21,24,25 ] or halides [ 26,27 ] originates from the partial preservation of the anionic framework and minimization of impurity permeation during cation exchange. The crystallinity of the ZTO film is lower than those of the ZnO and IZO films (bottom, Figure 2b), possibly due to the high doping concentration of Sn.…”

Performance improvement for printed indium gallium zinc oxide thin-film transistors with a preheating process

“…15,16 Recently, considerable progresses have been made in solution processed TOS-TFTs with low temperature annealing. [17][18][19][20][21][22][23] Among these studies, indium oxide (In 2 O 3 ) and indium-zinc-oxide (IZO) were the most used TOS materials, because indium can enhance the electron transport in metal oxide semiconductor, hence high mobility. 24 Some ZnO-based thin lm transistors have been produced at temperatures lower than 200 C by using amminehydroxo metal aqueous solution as well.…”

“…It was also found that the chemical conversion from metal nitrate into metal oxide was greatly affected by the processing procedures and parameters. 19,21,32 For example, the activation temperature of spin-coated In 2 O 3 TFTs was reduced from 250 to 175 C by replacing alcohol with water as solvent for metal nitrates. 21 Similarly, reducing the temperature of metal nitrates solution from 60 C to 4 C enhanced mobility by 2-3 times.…”