Thermal analysis of high-power millimeter-wave Schottky diode frequency multipliers

Pérez-Moreno, Carlos G.; Grajal, Jesús; Viegas, Colin; Liu, Hairui; Powell, Jeff R.; Alderman, Byron

doi:10.1109/gsmm.2016.7500307

Cited by 14 publications

(12 citation statements)

References 11 publications

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“…The simulated performances based on electro-thermal exhibit better agreement with the measured results in previous researches [29], [30]. Meanwhile, according to the researches in [29], the flip chip diodes mounted on high thermal conductive substrate exhibit better thermal behaviors compared membrane integrated diodes or substrateless configuration. Therefore, the flip chip Schottky diodes are chosen to realize 220 GHz high power triplers.…”

Section: Introductionsupporting

confidence: 74%

“…Over the last ten years, the introduction of self-consistent electrothermal model of Schottky diode multipliers has improved the designing procedures by analyzing the internal temperature distributions and offering useful information for circuit reliability and optimization [30]- [32]. The simulated performances based on electro-thermal exhibit better agreement with the measured results in previous researches [29], [30]. Meanwhile, according to the researches in [29], the flip chip diodes mounted on high thermal conductive substrate exhibit better thermal behaviors compared membrane integrated diodes or substrateless configuration.…”

Section: Introductionmentioning

confidence: 69%

“…An effective solution is applying Schottky diodes with more anodes to distribute input power. Using circuit substrates with high thermal conductivity is another method to overcome the thermal issues [27]- [29].…”

Section: Introductionmentioning

confidence: 99%

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Development of High Power 220 GHz Frequency Triplers Based on Schottky Diodes

et al. 2020

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In this paper, the development of two high power 220 GHz frequency triplers is proposed. The GaAs Schottky diodes with six nodes are applied to realize high efficiency 220 GHz tripler, while the application of GaN Schottky diodes with eight nodes is another attempt to improve power handling of the 220 GHz tripler. To reduce thermal effect of high power multipliers, the AlN substrates with high thermal conductivity are applied to provide better heat dissipation at the diode areas. A combination of electrical and thermal model of the Schottky diodes is established while the optimization of 220 GHz triplers are realized with 3D electromagnetic (EM) simulation and harmonic balanced simulation. Good agreement is achieved between the simulated results based on electro-thermal model and measured performances of the triplers. At room temperature, peak efficiency of the tripler based on GaAs Schottky diodes is 17.8%, while the maximum output of the tripler is 38.2 mW with 300 mW input power. As for the 220 GHz GaN Schottky diode tripler, measured results show that the maximum power handling is beyond 400 mW. The peak efficiency and maximum output are 4.7% and 18.4 mW, respectively. The proposed methods of developing high power multipliers can be applied in higher frequency band in the future.

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Section: Introductionsupporting

confidence: 74%

Section: Introductionmentioning

confidence: 69%

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Development of High Power 220 GHz Frequency Triplers Based on Schottky Diodes

et al. 2020

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“…The excessive self‐heating phenomenon in the small junction areas certainly would lead to rapid performance degradation or even junction breakdown. In order to evaluate the self‐heating level of the diode as well as its impacts on circuit performances, electronic analysis of the circuit should be performed in cooperate with thermal simulations [ 6–9 ] .…”

Section: Architecture and Designmentioning

confidence: 99%

High Power 170 GHz Frequency Doubler Based on GaAs Schottky Diodes

Tian

Huang

et al. 2022

Chinese J of Electronics

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The research on high power 170 GHz frequency doubler based on the GaAs Schottky diodes is proposed in this paper. This basic doubler cell is developed with a 50-μm-thick, 600-μm-wide, and 2-mm-long AlN substrate with high thermal conductivity to reduce the thermal effect. Besides, power combined frequency doubler has been fabricated to improve the power capacity by a factor of two. Great agreement has been achieved between the simulated results based on electrothermal model and measured performances. At room temperature, the 3 dB bandwidth of the single doubler based on GaAs Schottky diodes is 11.8% over the frequency range from 160 to 180 GHz with pumping power of 150 to 330 mW. And the peak efficiency of the doubler is measured to be 33.1%, while the maximum output power is 101.7 mW at 174.08 GHz. As for power combined circuit, the best efficiency is 30.1% with a related output power of 204.6 mW. The proposed methods of developing high power multipliers can be applied in higher frequency band in the future.

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“…The circuit is printed on 100 µm thickness cyclic olefin copolymer (COC) substrate ( r = 2.3, tan δ = 0.0009) [14] and mounted in a 100 µm waveguide channel. Using four diodes instead of two avoids overheating and malfunctions that may occur when working at high temperatures [15].…”

Section: Th-harmonic Mixer Passive Circuitsmentioning

confidence: 99%

A Millimeter-Wave 4th-Harmonic Schottky Diode Mixer with Integrated Local Oscillator

et al. 2021

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In this paper the design and experimental validation of a fourth-harmonic mixer based on Schottky diodes working around 300 GHz is presented. The main novelty of this work consists in the integration of an MMIC-based local oscillator, working around 75 GHz, and a mixer in the same metallic block housing. A prototype has been characterized using the Y-Factor method and yields a best measured conversion loss and an equivalent noise temperature of 14 dB and 9600 K, respectively. This performance is comparable to the state-of-the-art for this type of mixer.

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Thermal analysis of high-power millimeter-wave Schottky diode frequency multipliers

Cited by 14 publications

References 11 publications

Development of High Power 220 GHz Frequency Triplers Based on Schottky Diodes

Development of High Power 220 GHz Frequency Triplers Based on Schottky Diodes

High Power 170 GHz Frequency Doubler Based on GaAs Schottky Diodes

A Millimeter-Wave 4th-Harmonic Schottky Diode Mixer with Integrated Local Oscillator

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