Thermal and Electrical Properties of 5-nm-Thick TaN Film Prepared by Atomic Layer Deposition Using a Pentakis(ethylmethylamino)tantalum Precursor for Copper Metallization

Bae, Nam-Jin; Na, Kyoung-Il; Cho, Hyun-Ick; Park, Ki-Yeol; Boo, Sung-Eun; Bae, Jeung-Ho; Lee, Jung‐Hee

doi:10.1143/jjap.45.9072

Cited by 16 publications

(5 citation statements)

References 7 publications

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“…It has been a challenge to obtain low resistivity ALD‐produced tantalum nitride, which is a highly desirable metallization material for applications in, for example, interconnect technology. Several metal‐organic tantalum precursors based on alkylamide compounds have been studied for deposition of low resistivity TaN x ,55–61 however no significant progress has been achieved. A recent work carried out using Ta( t BuN)(NEt 2 ) 3 (TBTDET) and hydrazine achieved approximately 100 mΩ cm, slightly lower than the resistivity obtained via the TBTDET and NH 3 reaction 58.…”

Section: Thermal Ald Metallization Processes With An Ab Sequencementioning

confidence: 99%

Recent Developments of Atomic Layer Deposition Processes for Metallization

Liu¹

2013

Chemical Vapor Deposition

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Atomic layer deposition (ALD) has become an enabling technology for a wide range of applications where depositions of high quality, conformal thin films are desired. The needs of conducting materials with tailored properties call for ALD metallization processes that can meet diverse requirements in various applications. Recent developments of ALD processes for conducting materials have led to some novel ALD chemistries. Most of the ALD binary materials are formed in a typical AB sequence from two reactants. More complex ternary and doped materials can be achieved according to the same AB sequence principle through nano‐lamination of two binary materials using three or more reactants. It is demonstrated that ternary and elemental materials can be deposited using two reactants with a basic ALD AB sequence. Furthermore, an ALD process is not limited to an AB sequence, an ABC sequence with a surface‐controlled ALD reaction is also possible. A double replacement reaction mechanism is proposed with examples of novel processes such as TaCxNy, WCx, and WNxCy. Recent developments of ALD metallization processes have opened up more opportunities of producing novel ALD materials for industrial applications.

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Section: Thermal Ald Metallization Processes With An Ab Sequencementioning

confidence: 99%

Recent Developments of Atomic Layer Deposition Processes for Metallization

Liu¹

2013

Chemical Vapor Deposition

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“…ALD has many advantages over other deposition methods, such as an excellent thickness uniformity over a large substrate area, conformality, a low impurity content, and precise thickness control. [9][10][11] However, ALD itself also has some problems, such as a narrow process window and a low throughput along with a relatively low film density. To reduce and/or eliminate these problems, we investigated plasma-enhanced ALD (PEALD), which is expected to increase the reactivity, reduce the impurity content, widen the process window, and increase the film density.…”

Section: Introductionmentioning

confidence: 99%

Barrier Characteristics of ZrN Films Deposited by Remote Plasma-Enhanced Atomic Layer Deposition Using Tetrakis(diethylamino)zirconium Precursor

Cho

Lee

Song

et al. 2007

jjap

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A reconstruction technique to calculate accurate tomograms of a sample, at a voxel scale, from tomographic experiments that involve probe-sample interactions of any degree of complexity is proposed. The properties of the reconstruction technique that accomplish this are outlined. The first guess to the solution is calculated directly from the reconstructed experimental projection data. To improve the accuracy of the approximate solution at every iteration, projection data are calculated by simulating the tomographic experiment, rather than by using a projection matrix. Calculating the ratio of the reconstructed experimental projection data to the reconstructed simulated projection data provides correction factors at every voxel. The approximate solution is multiplied by these correction factors. This correction formulation is identical to that used in the image-space reconstruction algorithm technique. High spatial resolution and accurate solutions are achieved by not implementing any form of smoothing. Instead, a novel technique is used to reduce the noise in the tomograms substantially. We call this reconstruction technique the discretized image-space reconstruction algorithm. This reconstruction technique provides a means to calculate the mass density and elemental composition tomograms of microscopic samples properly, utilizing the wealth of information measured in scanning transmission ion microscopy and particle-induced x-ray emission tomography experiments. To demonstrate the efficacy of this reconstruction technique, examples of scanning transmission ion microscopy tomography experiments are presented.

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“…Hydrogen plasmas have also been employed to reduce TaF 5 prior to nitridation with NH 3 . 28 In addition, there have been investigations of alternate tantalum organometallic sources, such as pentakis͑dimethylamino͒ tantalum ͑PDMAT͒, 29 pentakis͑ethylmethylamino͒ tantalum, 30 ͑tert-butylimido͒tris͑ethylmethylamino͒ tantalum, 31 and ͑tert-butylimido͒tris͑diethylamido͒ tantalum ͑TBTDET͒. [32][33][34] TBTDET is a volatile liquid precursor and contains a Ta v N bond that is reported to facilitate the formation of conductive films.…”

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confidence: 99%

Tantalum Nitride Atomic Layer Deposition Using (tert-Butylimido)tris(diethylamido)tantalum and Hydrazine

Burton¹,

Lavoie

George

2008

J. Electrochem. Soc.

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Tantalum nitride ͑TaN x ͒ atomic layer deposition ͑ALD͒ was performed using sequential exposures of ͑tert-butylimido͒tris͑diethylamido͒ tantalum ͑TBTDET͒ and either hydrazine ͑N 2 H 4 ͒ or ammonia ͑NH 3 ͒. X-ray reflectivity studies demonstrated that hydrazine consistently yielded TaN x films with larger growth rates and higher densities than the TaN x films grown using ammonia. The TaN x ALD growth rate of 0.62 Å per cycle using hydrazine was higher than the growth rate obtained using ammonia over the temperature range from 150-250°C. Quartz crystal microbalance measurements were also used to confirm the TaN x ALD growth rates and to verify the self-limiting behavior of each reactant. Hydrazine yielded a TaN x density of 10.1 g/cm 3 at 225°C that was significantly greater than the highest density of 8.3 g/cm 3 obtained at 225°C with ammonia. In situ resistivity measurements on the TaN x ALD films grown using hydrazine at 225°C obtained resistivities of ϳ1 ϫ 10 5 ⍀ cm at 225°C and ϳ4 ϫ 10 4 ⍀ cm after annealing to 450°C. The surface species and reaction products during the sequential exposures of TBTDET and hydrazine at 225°C were examined using Fourier transform infrared spectroscopy and quadrupole mass spectrometry. These studies allowed a growth mechanism to be proposed for TaN x ALD using TBTDET and hydrazine.

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Thermal and Electrical Properties of 5-nm-Thick TaN Film Prepared by Atomic Layer Deposition Using a Pentakis(ethylmethylamino)tantalum Precursor for Copper Metallization

Cited by 16 publications

References 7 publications

Recent Developments of Atomic Layer Deposition Processes for Metallization

Recent Developments of Atomic Layer Deposition Processes for Metallization

Barrier Characteristics of ZrN Films Deposited by Remote Plasma-Enhanced Atomic Layer Deposition Using Tetrakis(diethylamino)zirconium Precursor

Tantalum Nitride Atomic Layer Deposition Using (tert-Butylimido)tris(diethylamido)tantalum and Hydrazine

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