Barrier Characteristics of ZrN Films Deposited by Remote Plasma-Enhanced Atomic Layer Deposition Using Tetrakis(diethylamino)zirconium Precursor

Abstract

A reconstruction technique to calculate accurate tomograms of a sample, at a voxel scale, from tomographic experiments that involve probe-sample interactions of any degree of complexity is proposed. The properties of the reconstruction technique that accomplish this are outlined. The first guess to the solution is calculated directly from the reconstructed experimental projection data. To improve the accuracy of the approximate solution at every iteration, projection data are calculated by simulating the tomographic experiment, rather than by using a projection matrix. Calculating the ratio of the reconstructed experimental projection data to the reconstructed simulated projection data provides correction factors at every voxel. The approximate solution is multiplied by these correction factors. This correction formulation is identical to that used in the image-space reconstruction algorithm technique. High spatial resolution and accurate solutions are achieved by not implementing any form of smoothing. Instead, a novel technique is used to reduce the noise in the tomograms substantially. We call this reconstruction technique the discretized image-space reconstruction algorithm. This reconstruction technique provides a means to calculate the mass density and elemental composition tomograms of microscopic samples properly, utilizing the wealth of information measured in scanning transmission ion microscopy and particle-induced x-ray emission tomography experiments. To demonstrate the efficacy of this reconstruction technique, examples of scanning transmission ion microscopy tomography experiments are presented.

Nano-grained ZrB2 thin films as a high-performance diffusion barrier in Cu metallization

“…6(d), in which no diffraction spots of CuSi x could be iden-tied. It conrms that the inter-diffusion between Cu and Si is effectively suppressed even when the thin lms are annealed at 700 C. As reported previously, amorphous ZrN and W 2 N thin lms with the same thickness of 15 nm could only prevent the inter-diffusion between Cu and Si up to 600 C, and they have a high resistivity of 400 mU cm and 910 mU cm, 31,32 respectively. RuAlO thin lms with nano-crystalline structure exhibited a lower resistivity of 210 mU cm and failed at 650 C. 33 However, the ternary nature makes it difficult to maintain the process stability and the stoichiometric ratio of the lms.…”

Gadolinium nitride films deposited using a PEALD based process

“…Gd(MeCp) 3 (supplied by SAFC-Hitech) was dosed into the reactor as a gadolinium source using a conventional heated bubbler by flowing zero grade Argon (supplied by BOC 99.998%) through the precursor. The radical co-reactants doses were produced by passing the required gas mixture through the ICP, operating at its maximum power of 300 W. The maximum ICP power was chosen because it has been found that higher plasma power tends to deposit film with less carbon impurity [51]. The gas flows into the ICP were controlled by Mass Flow Controllers (MFCs) and were stabilized for 2 s before striking the plasma.…”

“…HfN [47], TaN [35,41] and TiN [48] have been grown using this approach. Pure N 2 plasma has also been used for the deposition of Hf 3 N 4 [49], TiN [46] and ZrN [50] with alkylamide precursors. In this study the effects of different nitrogen co-reactants including ammonia, monomethylhydrazine, mixed H 2 /N 2 plasma and pure N 2 plasma have been investigated in the ALD based processes of Gd nitride.…”

Chromium carbide/Carbon Nanotube Hybrid Structure Assisted Copper Composites with Low Temperature Coefficient of Resistance

“…With increasing demand for faster, smaller electronic devices in ultralarge-scale integrated devices (ULSI), copper (Cu), with a low resistivity and a superior electromigration resistance, is a promising conductor material compared to conventional aluminum (Al) 1 , 2 . However, the high temperature coefficient of resistance (TCR) of about 4,000 ppm °C −1 of pure Cu is an obstacle for precise conductivity control of a device due to the heat generated during operation.…”