2015
DOI: 10.1002/smll.201303888
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Thermal AND Gate Using a Monolayer Graphene Nanoribbon

Abstract: The first ever implementation of a thermal AND gate, which performs logic calculations with phonons, is presented using two identical thermal diodes composed of asymmetric graphene nanoribbons (GNRs). Employing molecular dynamics simulations, the characteristics of this AND gate are investigated and compared with those for an electrical AND gate. The thermal gate mechanism originates through thermal rectification due to asymmetric phonon boundary scattering in the two diodes, which is only effective at the nan… Show more

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Cited by 32 publications
(20 citation statements)
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“…[ 39 ] Furthermore, Pal and Puri realized the function of thermal logic gate based on two asymmetric graphene thermal diodes. [ 40 ] Subsequently, carbon‐based systems have been extensively studied in thermal management and energy field. [ 41–44 ] In addition, more and more carbon‐based materials are being discovered for their excellent performance.…”
Section: Figurementioning
confidence: 99%
“…[ 39 ] Furthermore, Pal and Puri realized the function of thermal logic gate based on two asymmetric graphene thermal diodes. [ 40 ] Subsequently, carbon‐based systems have been extensively studied in thermal management and energy field. [ 41–44 ] In addition, more and more carbon‐based materials are being discovered for their excellent performance.…”
Section: Figurementioning
confidence: 99%
“…Here, we only mentioned several important physical mechanisms for nanomaterials, while a large number of MD simulations have been published, especially for the two-dimensional materials. By designing asymmetric thickness [16], width [17][18][19], strain [20,21], and defect [22,23] graphene structures in the simulation, thermal rectification could be realized.…”
Section: Introductionmentioning
confidence: 99%
“…Graphene, which is an atomically thin layer of carbon atoms in a honeycomb lattice, has extraordinary electronic and mechanical properties. Due to the linear dispersion at the k ‐point, high charge carrier mobility exceeding 200 000 cm 2 V −1 s −1 has been reported, promising low‐power electronics . However, graphene does not have any bandgap, limiting its use in semiconducting applications.…”
mentioning
confidence: 99%