Thermal annealing effect on ultraviolet-light-induced leakage current in low-pressure chemical vapor deposited silicon nitride films

Kobayashi, Kenzo; Suzuki, Aran; Ishikawa, Kokichi

doi:10.1016/j.tsf.2013.10.163

Cited by 10 publications

(4 citation statements)

References 44 publications

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“…Cl 2 ) and nitrogen (N 2 ). This reaction required a substrate temperature of 750 • C, which is prohibitively high for most electronic and solar applications 77. A significant report34 included the use of pulsed RF generated by modulating a continuous 200Hz low-frequency wave signal…”

mentioning

confidence: 99%

Review—Silicon Nitride and Silicon Nitride-Rich Thin Film Technologies: Trends in Deposition Techniques and Related Applications

Kaloyeros

Jové

Goff

et al. 2017

ECS J. Solid State Sci. Technol.

133

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This article provides an overview of the state-of-the-art chemistry and processing technologies for silicon nitride and silicon nitride-rich films, i.e., silicon nitride with C inclusion, both in hydrogenated (SiNx:H and SiNx:H(C)) and non-hydrogenated (SiNx and SiNx(C)) forms. The emphasis is on emerging trends and innovations in these SiNx material system technologies, with focus on Si and N source chemistries and thin film growth processes, including their primary effects on resulting film properties. It also illustrates that SiNx and its SiNx(C) derivative are the focus of an ever-growing research and manufacturing interest and that their potential usages are expanding into new technological areas.

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mentioning

confidence: 99%

Review—Silicon Nitride and Silicon Nitride-Rich Thin Film Technologies: Trends in Deposition Techniques and Related Applications

Kaloyeros

Jové

Goff

et al. 2017

ECS J. Solid State Sci. Technol.

133

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“…23,34) On the other hand, it has recently been reported that K 0 centers seem to act as generation centers of electron-hole pairs. 40,41) The generation centers in the charge trapping layers would also raise great concern for the reliability of charge trapping memories. Therefore, in the present study, we investigated the thermal stability of K 0 centers in silicon nitride films grown at 750 °C using a low-pressure chemical vapor deposition (LPCVD) technique.…”

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confidence: 99%

Thermal stability of paramagnetic defect centers in amorphous silicon nitride films

Kobayashi¹,

Suzuki²

2014

Jpn. J. Appl. Phys.

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We have investigated the thermal stability of paramagnetic silicon dangling bond centers, which are called K0 centers, generated by ultraviolet exposure of low-pressure chemical-vapor-deposited silicon nitride films. The K0 center density, which was measured by electron spin resonance spectroscopy, decayed upon isothermal annealing at 150, 240, 400, and 750 °C. Some K0 centers were not easily relaxed even after long-time annealing at 150, 240, and 400 °C. An analytical model was proposed to explain the isothermal decay of the K0 center density and the presence of long-lifetime K0 centers.

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“…The effect of ultraviolet light has been investigated in the past, focusing on different material properties that are affected by it, such as the type and concentration of dangling bonds and the stress profile. [13][14][15][16] This work will focus on the optical properties of silicon nitride exposed by ultraviolet light, and how these can be used for tuning the response of photonic devices.…”

Section: Introductionmentioning

confidence: 99%

Effects of ultraviolet exposure on silicon nitride and its application in tuning passive photonic devices

Paoli

Flint

Bucio³

et al. 2023

Silicon Photonics XVIII

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Silicon nitride films with different compositions are exposed to ultraviolet light using both an LED and a laser as light sources (with a wavelength of 244 nm and 265 nm, respectively). Collected data suggests a decrease in refractive index following the exposure, and this can be used for permanently tuning the response of passive photonic devices. The effects of ultraviolet illumination on the material are studied combining observations of the change in the response of the photonic devices and analysis of exposed films.

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Thermal annealing effect on ultraviolet-light-induced leakage current in low-pressure chemical vapor deposited silicon nitride films

Cited by 10 publications

References 44 publications

Review—Silicon Nitride and Silicon Nitride-Rich Thin Film Technologies: Trends in Deposition Techniques and Related Applications

Review—Silicon Nitride and Silicon Nitride-Rich Thin Film Technologies: Trends in Deposition Techniques and Related Applications

Thermal stability of paramagnetic defect centers in amorphous silicon nitride films

Effects of ultraviolet exposure on silicon nitride and its application in tuning passive photonic devices

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