Thermal annealing effects and local atomic configurations in GaInNAs thin films

Uno, Kazuyuki; Yamada, Masako; Tanaka, Ichiro; Ohtsuki, Osamu; Takizawa, Toshiyuki

doi:10.1016/j.jcrysgro.2004.12.057

Cited by 16 publications

(10 citation statements)

References 13 publications

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“…The same behaviour has been observed in previous work reported of InAsN QDs [6]. The blueshift (BS) could be originated from In/Ga interdiffusion between the QDs and the GaAs capping, As-N interdiffusion inside the layer of QDs, and, as occurred in InGaAsN QWs [7], bond reorganization around N atoms. In Fig.…”

Section: Contributed Articlesupporting

confidence: 86%

Dependence of N incorporation into (Ga)InAsN QDs on Ga content probed by rapid thermal annealing

Gargallo-Caballero

Guzmán

Hopkinson

et al. 2009

Phys. Status Solidi (c)

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In this letter we demonstrate that the N incorporation into (Ga)InAsN quantum dots (QDs), grown on GaAs (100) by radio‐frequency (RF) plasma assisted molecular beam epitaxy (MBE), is enhanced as the Ga content increases up to 30% and decreases for Ga contents higher than 30%. Thus, this effect exhibits a maximum N incorporation with a Ga content of 30%. Two sets of (Ga)InAsN QDs samples have been grown under the same growth conditions but with different N contents in one of them and with different Ga concentration in the other set. Optical analysis using Photoluminescence (PL) measurements of the as‐grown and post growth rapid thermal annealed samples have been performed. The experimental results show a clear increase of the blueshift with the N concentration as occurred in dilute nitride quantum well (QW) structures. PL peak emission wavelength as high as 1.55 μm has been obtained from QDs capped with GaAs. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Section: Contributed Articlesupporting

confidence: 86%

Dependence of N incorporation into (Ga)InAsN QDs on Ga content probed by rapid thermal annealing

Gargallo-Caballero

Guzmán

Hopkinson

et al. 2009

Phys. Status Solidi (c)

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“…As mentioned by Potashnik et al [19] for GaMnAs shortrange clustering of Mn-As complexes can reduce the T c . We can easily guess that the incorporated nitrogen atoms form Mn-N cluster as the short-range clustering in the GaInNAs films [20]. More detailed discussion will be needed to assign the origin of the observed behavior.…”

Section: Resultsmentioning

confidence: 97%

Molecular beam epitaxy and magnetic properties of GaMnNAs

Kobayashi¹,

Mori²,

Kato³

et al. 2007

Journal of Crystal Growth

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“…X-ray absorption fine structure (EXAFS) measurements have confirmed this effect. [15] The pairing of In and N affects the band edge fluctuations and should decrease alloy scattering.…”

Section: Resultsmentioning

confidence: 99%

Effects of in situ annealing on GaInNAs solar cells

Kurtz

King²,

Law³

et al. 2013

2013 IEEE 39th Photovoltaic Specialists Conference (PVSC)

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GaInNAs solar cells grown by metal-organic, chemical vapor deposition (MOCVD) are known to demonstrate dramatic changes in performance upon annealing. GaInNAs necessarily experiences some in situ annealing when integrated into a multijunction cell, as when the upper four junctions of a six-junction (e.g., AlGaInP/GaInP/AlGaInAs/GaInAs/ GaInNAs/Ge) cell are grown on top of the GaInNAs subcell. Therefore, understanding the changes that occur during these inadvertent, in situ anneals is necessary to design an MOCVD growth process for high-performance six-junction cells. These six-junction cells have the potential for > 50% efficiency under the concentrated terrestrial spectrum and > 40 % under the air mass zero (AM0) spectrum. This paper shows how an in situ anneal at 650°C can cause movement of the junction in the GaInNAs, first improving and then ruining the performance of the cell. Similarly, in situ annealing depends on the annealing temperature, showing, for the conditions studied, optimal performance for an anneal at 675°C. Higher temperatures resulted in improved material quality, but the junction did not move, resulting in inferior performance compared with the samples annealed at lower temperatures. The performance of the best GaInNAs cells is summarized showing background carrier concentrations as low as 2 X 10 15 cm -3 , depletion widths as wide as ~ 0.6 µm, and AM0 photocurrents for operation under GaAs approaching 12 mA/cm 2 .

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Thermal annealing effects and local atomic configurations in GaInNAs thin films

Cited by 16 publications

References 13 publications

Dependence of N incorporation into (Ga)InAsN QDs on Ga content probed by rapid thermal annealing

Dependence of N incorporation into (Ga)InAsN QDs on Ga content probed by rapid thermal annealing

Molecular beam epitaxy and magnetic properties of GaMnNAs

Effects of in situ annealing on GaInNAs solar cells

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