1987
DOI: 10.1109/tmag.1987.1065019
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Thermal annealing of RF sputtered NbN

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Cited by 9 publications
(3 citation statements)
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“…The reduction of N( F ) weakens the electron-phonon coupling strength and hence the T C reduces. Earlier reports revealed that the T C of as deposited NbN films can be enhanced by vacuum annealing [38][39][40] but not in N 2 atmosphere [41,42]. These experiments further support our proposed mechanism of suppression of the T C in δ − NbN.…”
supporting
confidence: 89%
See 1 more Smart Citation
“…The reduction of N( F ) weakens the electron-phonon coupling strength and hence the T C reduces. Earlier reports revealed that the T C of as deposited NbN films can be enhanced by vacuum annealing [38][39][40] but not in N 2 atmosphere [41,42]. These experiments further support our proposed mechanism of suppression of the T C in δ − NbN.…”
supporting
confidence: 89%
“…Formation of the N-interstitial defect complex in δ − NbN causes strong smearing of electronic structure by creating atomic disorder in the films and thus a significant reduction in the N( F ) which strongly influencing the electron-phonon coupling strength and consequently reduces the T C . Increase in the T C of vacuum annealed δ − NbN [38,39,40] and degradation of superconducting properties at N 2 atmosphere [41,42] further support our proposed mechanism. Based on above analysis we suggest that to obtain δ − NbN with high T C , films should be grown at Nb-rich conditions to avoid N interstitial defects and annealing of samples in a vacuum is recommended to eliminate residual N atoms.…”
supporting
confidence: 61%
“…Formation of the Ninterstitial defect complex in δ − NbN causes strong smearing of electronic structure by creating atomic disorder in the films and thus a significant reduction in the N(ǫ F ) which strongly influencing the electronphonon coupling strength and consequently reduces the T C . Increase in the T C of vacuum annealed δ − NbN [29][30][31] and degradation of superconducting properties at N 2 atmosphere [32,33] further support our proposed mechanism. Based on above analysis we suggest that to obtain δ − NbN with high T C , films should be grown at Nb-rich conditions to avoid N interstitial defects and annealing of samples in a vacuum is recommended to eliminate residual N atoms.…”
mentioning
confidence: 54%