Thermal aspects of efficient operation of vertical-cavity surface-emitting lasers

Nakwaski, W.

doi:10.1007/bf00287023

Cited by 30 publications

(18 citation statements)

References 68 publications

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“…Thermal impedance was measured by tracking the wavelength shift of the fundamental mode with dissipated power and ambient temperature [17]. The fundamental mode redshifts with temperature by 0.059 nm/K, while it redshifts with dissipated power by 0.42 nm/mW (Fig.…”

Section: A Static Performancementioning

confidence: 99%

Silicon-Integrated Hybrid-Cavity 850-nm VCSELs by Adhesive Bonding: Impact of Bonding Interface Thickness on Laser Performance

Kumari

Haglund

Gustavsson

et al. 2017

IEEE J. Select. Topics Quantum Electron.

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Abstract-The impact of bonding interface thickness on the performance of 850-nm silicon-integrated hybrid-cavity verticalcavity surface-emitting lasers (HC-VCSELs) is investigated. The HC-VCSEL is constructed by attaching a III-V "half-VCSEL" to a dielectric distributed Bragg reflector on a Si substrate using ultrathin divinylsiloxane-bis-benzocyclobutene (DVS-BCB) adhesive bonding. The thickness of the bonding interface, defined by the DVS-BCB layer together with a thin SiO 2 layer on the "half-VCSEL," can be used to tailor the performance, for e.g., maximum output power or modulation speed at a certain temperature, or temperature-stable performance. Here, we demonstrate an optical output power of 2.3 and 0.9 mW, a modulation bandwidth of 10.0 and 6.4 GHz, and error-free data transmission up to 25 and 10 Gb/s at an ambient temperature of 25 and 85°C, respectively. The thermal impedance is found to be unaffected by the bonding interface thickness.

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Section: A Static Performancementioning

confidence: 99%

Silicon-Integrated Hybrid-Cavity 850-nm VCSELs by Adhesive Bonding: Impact of Bonding Interface Thickness on Laser Performance

Kumari

Haglund

Gustavsson

et al. 2017

IEEE J. Select. Topics Quantum Electron.

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“…The emitted wavelength of the laser in our case will vary with ambient temperature and laser bias current affecting the outcome of the parameters in (2). In other words the Doppler frequency spectrum will depend on the ambient temperature and the laser current.…”

Section: Self-mixing In a Laser Diodementioning

confidence: 98%

“…Thanks to these advantages the use of VCSELs is currently expanding from the data communications sector into the field of laser based sensing systems. There are, however, some inherent problems associated with VCSEL operation, namely spatial hole burning, carrier diffusion and thermal constraints [1], [2]. One problem that remains of interest, in particular, is VCSEL performance in an uncooled regime with varying ambient temperatures.…”

Section: Introductionmentioning

confidence: 99%

Temperature and current dependence of doppler SNR in a VCSEL based self-mixing sensor

et al. 2009

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This paper proposes a method for maintaining the maximum signal-to-noise ratio (SNR) of the signal obtained from the self-mixing sensor based on a Vertical-Cavity SurfaceEmitting Laser (VCSEL). The SNR of the Doppler self-mixing signal was investigated experimentally as a function of laser driving current and ambient temperature. It was found that the locus of the maximum SNR in the current-temperature space can be well approximated by the simple analytical model based on the temperature behaviour of the VCSELs threshold current. A selfmixing Doppler signal was acquired from the variation in VCSEL junction voltage rather than from a conventional variation in laser optical power to reduce the complexity of the system. It was found that the optimum sensor performance over a wide range of ambient temperatures can be achieved by tuning the laser current according to the proposed model. This enables the sensor to operate without temperature stabilisation making it attractive for mobile applications and applications with limited power supply.

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“…A single transverse mode operation can be achieved via the introduction of mode-selective losses or by reducing the size of the cavity in both transverse and longitudinal directions [5,6]. The primary cause of the transverse mode competition is attributed to the well-known spatial hole burning effects (SHB-effects), which are produced by the interaction between the carriers and the multi-transverse modes in the laser active layer [7][8][9][10][11][12]. It signifies that the injection current plays a very important role in the multitransverse mode behavior of VCSELs.…”

mentioning

confidence: 99%

Influences of the Current Transverse Profile on the Transverse Mode Competition of VCSELs Diodes

Zhang

2007

Int J Infrared Milli Waves

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A spatially independent model of vertical-cavity surface-emitting lasers (VCSELs) is derived by integrating the spatially dependent rate equations over the cross section of the cavity of a VCSEL. The angular and radial non-uniformities of the injection current are taken into account. The well-known LP modes of a weakly-guiding cylindrical waveguide are employed to describe the transverse modal structure in the VCSEL cavity. This model is solved in a self-consistent way by using the 4th order Runge-Kutta method. The dependence of transverse mode competition on the current intensity, the angular and radial non-uniformities of the injection current, and the geometrical parameters of the electrical contact are thoroughly investigated and analyzed. The results are useful to the optimum design of the optical transverse modal structure of VCSELs.

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Thermal aspects of efficient operation of vertical-cavity surface-emitting lasers

Cited by 30 publications

References 68 publications

Silicon-Integrated Hybrid-Cavity 850-nm VCSELs by Adhesive Bonding: Impact of Bonding Interface Thickness on Laser Performance

Silicon-Integrated Hybrid-Cavity 850-nm VCSELs by Adhesive Bonding: Impact of Bonding Interface Thickness on Laser Performance

Temperature and current dependence of doppler SNR in a VCSEL based self-mixing sensor

Influences of the Current Transverse Profile on the Transverse Mode Competition of VCSELs Diodes

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