Thermal atomic layer deposition of AlOxNy thin films for surface passivation of nano-textured flexible silicon

Parashar, Piyush K.; Kinnunen, Sami; Sajavaara, Timo; Toppari, J. Jussi; Komarala, Vamsi K.

doi:10.1016/j.solmat.2019.01.019

Cited by 23 publications

(14 citation statements)

References 23 publications

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“…Hence, the polishing step can likely be omitted, or at least substantially shortened, by replacing SiNx with ALD Al2O3, which improves the optical performance of the final device. Although most of the reports on MACE b-Si have concentrated on SiNx, the excellence of ALD Al2O3 has been demonstrated in a few recent studies [12]- [16]. Rahman et al reported surface recombination velocity (SRV) of 26 cm/s in silicon nanowires with 6 % reflectance [12], whereas Chong et al achieved even better surface passivation using slightly shallower nanostructures with a combination of ~19 cm/s SRV and ~7 % reflectance [13].…”

Section: Introductionmentioning

confidence: 99%

“…Rahman et al reported surface recombination velocity (SRV) of 26 cm/s in silicon nanowires with 6 % reflectance [12], whereas Chong et al achieved even better surface passivation using slightly shallower nanostructures with a combination of ~19 cm/s SRV and ~7 % reflectance [13]. Additionally, Parashar et al recently demonstrated SRV of only ~5 cm/s on 50 µm thick flexible b-Si substrates using a nitrogen-doped Al2O3 thin film [16]. However, most of the studies have optimized the MACE parameters and the resulting b-Si morphology only from the optics perspective [17], [18], and disregarded surface passivation.…”

Section: Introductionmentioning

confidence: 99%

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Effect of MACE Parameters on Electrical and Optical Properties of ALD Passivated Black Silicon

Chen

Pasanen

Vähänissi

et al. 2019

IEEE J. Photovoltaics

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Metal-assisted chemical etching (MACE) enables efficient texturing of diamond-wire sawn multicrystalline silicon (mc-Si) wafers. However, the excellent optics are often sacrificed by polishing the surface to achieve better surface passivation with chemical-vapor-deposited (CVD) silicon nitride (SiNx). In this work, we show that a polishing step is not required when CVD SiNx is replaced with atomic-layer-deposited (ALD) aluminum oxide (Al2O3). Indeed, while polishing increases reflectance, it has in general only very modest effect on surface recombination velocity of ALD-passivated b-Si. Furthermore, since ALD Al2O3 is compatible with various surface morphologies due to its excellent conformality, the MACE parameters can be more freely adjusted. First, the concentration of silver nitrate (AgNO3) in AgNO3/H2O solution that is used to deposit Ag nanoparticles is shown to affect the final b-Si morphology. Instead of needle-shaped b-Si produced by 5 mmol/L AgNO3 concentration, two orders of magnitude lower AgNO3 concentration produces porous structures, which are more challenging to passivate. Additionally, we demonstrate that a separate Ag nanoparticle removal step in nitric acid (HNO3) is not a prerequisite for high carrier lifetime. Instead, Ag nanoparticles present during polishing in a HF/HNO3/H2O solution affect the final b-Si morphology by accelerating the etching of Si. The results demonstrate that no trade-offs are necessary between optical and electrical properties of MACE b-Si when using ALD.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Effect of MACE Parameters on Electrical and Optical Properties of ALD Passivated Black Silicon

Chen

Pasanen

Vähänissi

et al. 2019

IEEE J. Photovoltaics

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“…Then, the doctor blade removes excess ink. The technique was developed and used for photographs and newspapers in the past, and its potential has been reported in a few journals about solar-cell production [26,27]. However, flexographic printing is considered to be faster and simpler than gravure printing [26].…”

Section: (A) Roll-to-roll Printingmentioning

confidence: 99%

“…The technique was developed and used for photographs and newspapers in the past, and its potential has been reported in a few journals about solar-cell production [26,27]. However, flexographic printing is considered to be faster and simpler than gravure printing [26]. Flexographic printing involves directly printing rubber or plastic materials, such as plastic polyvinylidene fluoride or polyvinylidene difluoride (PVDF).…”

Section: (A) Roll-to-roll Printingmentioning

confidence: 99%

Silicon-Based Technologies for Flexible Photovoltaic (PV) Devices: From Basic Mechanism to Manufacturing Technologies

2021

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Over the past few decades, silicon-based solar cells have been used in the photovoltaic (PV) industry because of the abundance of silicon material and the mature fabrication process. However, as more electrical devices with wearable and portable functions are required, silicon-based PV solar cells have been developed to create solar cells that are flexible, lightweight, and thin. Unlike flexible PV systems (inorganic and organic), the drawbacks of silicon-based solar cells are that they are difficult to fabricate as flexible solar cells. However, new technologies have emerged for flexible solar cells with silicon. In this paper, we describe the basic energy-conversion mechanism from light and introduce various silicon-based manufacturing technologies for flexible solar cells. In addition, for high energy-conversion efficiency, we deal with various technologies (process, structure, and materials).

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“…Aluminum oxynitride AlO x N y films with different nitrogen contents have been deposited by thermal ALD on flexible nano‐textured silicon surfaces for the surface passivation application. [ 138,139 ] The surfaces coated with AlO x N y films showed better surface recombination velocity due to the collective effect of field‐effect passivation by the presence of fixed negative charges, and chemical passivation owing to hydrogen within the film. [ 137,138 ]…”

Section: State‐of‐the‐art Mixed‐anion Ald Thin Filmsmentioning

confidence: 99%

Mixed‐Anion Compounds: An Unexplored Playground for ALD Fabrication

Tripathi

Karppinen

2021

Adv Materials Inter

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For decades the most successful approach towards new inorganic material innovations for next‐generation devices has been to manipulate the cation composition. As this cation‐centric material development is inevitably approaching its saturation, new chemistries are needed to maintain the pace of technological progress. One of the new chemistry approaches is to play with the anions instead of the cations. Moreover, advances in fabrication techniques are needed to address the endeavors to shrink the device and component dimensions. Here, the combination of mixed‐anion chemistries, such as oxychalcogenides or carbopnictides, and the state‐of‐the‐art atomic layer deposition (ALD) thin‐film technology are highlighted. The unique bottom‐up material building mode of ALD can lead to scientifically exciting but at the same time industry‐feasible material innovations. In this brief review, the present status and prospects, and the challenges of this emerging field are discussed.

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Thermal atomic layer deposition of AlOxNy thin films for surface passivation of nano-textured flexible silicon

Cited by 23 publications

References 23 publications

Effect of MACE Parameters on Electrical and Optical Properties of ALD Passivated Black Silicon

Effect of MACE Parameters on Electrical and Optical Properties of ALD Passivated Black Silicon

Silicon-Based Technologies for Flexible Photovoltaic (PV) Devices: From Basic Mechanism to Manufacturing Technologies

Mixed‐Anion Compounds: An Unexplored Playground for ALD Fabrication

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