Thermal atomic layer etching of cobalt using plasma chlorination and chelation with hexafluoroacetylacetone

Plasma atomic layer etching of ruthenium with surface fluorination and ion bombardment

“…In particular, the interconnected linewidth decreases as the CD of the semiconductor decreases. [1][2][3] Moreover, resistance-capacitance (RC) delay in the interconnects significantly increases as the spacing between the interconnect lines decreases, and the RC delay should be reduced to lower power consumption, increase semiconductor chip speed, and reduce crosstalk. Currently, Cu is a widely used interconnect metal, and SiCOH is used as a dielectric material in interconnect lines.…”