Thermal behavior Spice study of 6H-SiC NMOS transistors

Chalabi, D.; Saïdane, A.; Idrissi-Benzohra, M.; Benzohra, M.

doi:10.1016/j.mejo.2008.12.004

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Influence Of Temperature On the Transconductance G M (T)1

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“…The transconductance is an important electrical parameter that characterizes MOS transistor in order to study its performances [12]. The saturation velocity and carrier mobility decrease when temperature increase [03].…”

Section: Influence Of Temperature On the Transconductance G M (T)mentioning

confidence: 99%

MOSiC (3C, 4H and 6H) Transistors 130nm by BSIM3v3 Model in Low Voltage and Low Power

Hebali¹,

Berbara²,

Benzohra³

et al. 2017

JESTR

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Silicon carbide is a very interesting semiconductor for applications in high temperature, high frequency and high power. In this article, we have studied and compared MOS transistors with 130nm silicon carbide (3C-SiC, 4H-SiC and 6H-SiC) technologies using BSIM3v3 model. To perform this work we have used PSpice to study the characteristics I(V) and the transconductance gm as a function of temperature in the range -200° C to 750° C with a supply voltage VDS = 1.2V. We have also calculated the transition frequencies fT of the three types of transistors. Our results show that the (3C, 4H and 6H)-SiC transistors operate under a low voltage, low power, high temperature and high frequency in submicron dimension.

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Section: Influence Of Temperature On the Transconductance G M (T)mentioning

confidence: 99%