1998
DOI: 10.1063/1.120979
|View full text |Cite
|
Sign up to set email alerts
|

Thermal characteristics of silicon nitride membranes at sub-Kelvin temperatures

Abstract: We have performed calorimetric measurements on 200 nm thin silicon nitride membranes at temperatures from 0.07 to 1 K. Besides full windows, membranes cut into a thermally isolating suspended bridge geometry were investigated. Based on dc and ac measurements employing normal-metal/insulator/superconductor (NIS) tunnel junctions both as a thermometer and a heater, we report on heat transport and thermal relaxation in silicon nitride films. The bridge structure improves thermal isolation and, consequently, energ… Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
2
1
1

Citation Types

4
84
0

Year Published

2002
2002
2014
2014

Publication Types

Select...
5
1
1

Relationship

1
6

Authors

Journals

citations
Cited by 91 publications
(88 citation statements)
references
References 8 publications
4
84
0
Order By: Relevance
“…The voltage bias V refr across the SINIS structure allows us to change the electron temperature in the N region; at the same time, a measure of the voltage drop across the two probe junctions ͑V th ͒ at a constant bias current ͑I 0 ͒ yields the electron temperature T e,N in the normal electrode ͑Rowell and Tsui, 1976͒. Figure 27͑c͒ illustrates the experimental data of Leivo et al ͑1996͒ of the measured electron temperature T ϵ T e,N versus V refr , taken at different bath temperatures ͑i.e., those at V refr =0͒. As can be seen, the electron temperature rapidly decreases by increasing the voltage bias across the SINIS structure, reaching the lowest value around V refr Ϸ 2⌬ Ӎ 360 eV ͑note that two junctions in series are involved in the process͒.…”
Section: "Si…nis Structuresmentioning
confidence: 99%
See 3 more Smart Citations
“…The voltage bias V refr across the SINIS structure allows us to change the electron temperature in the N region; at the same time, a measure of the voltage drop across the two probe junctions ͑V th ͒ at a constant bias current ͑I 0 ͒ yields the electron temperature T e,N in the normal electrode ͑Rowell and Tsui, 1976͒. Figure 27͑c͒ illustrates the experimental data of Leivo et al ͑1996͒ of the measured electron temperature T ϵ T e,N versus V refr , taken at different bath temperatures ͑i.e., those at V refr =0͒. As can be seen, the electron temperature rapidly decreases by increasing the voltage bias across the SINIS structure, reaching the lowest value around V refr Ϸ 2⌬ Ӎ 360 eV ͑note that two junctions in series are involved in the process͒.…”
Section: "Si…nis Structuresmentioning
confidence: 99%
“…The issue of how thermal conductivity and heat capacity of thin membranes and wires get modified due to geometrical constraints on the scale of the thermal wavelength of phonons has been addressed experimentally by several authors ͑Holmes et al, 1998; Leivo and Pekola, 1998;Woodcraft et al, 2000͒ and theoretically ͓see, e.g., Anghel et al ͑1998͒, Kuhn et al ͑2004͔͒. The main conclusion is that structures with one or two dimensions d Ͻ ph restrict the propagation of ͑ballistic͒ phonons into the remaining "large" dimensions and thereby reduce the magnitude of the corresponding quantities and C at typical subkelvin temperatures, but the temperature dependences get weaker.…”
Section: G Heat Transport By Phononsmentioning
confidence: 99%
See 2 more Smart Citations
“…Here we assume validity of the Wiedemann-Franz law. The thermal conductivity of the 250 nm thick SiN membrane is given by M ' 14:5 10 ÿ3 T 1:98 [8], and at temperatures present in the system (20 -150 mK) it is typically 3 orders of magnitude smaller than S . As the thicknesses of the SiN and the TES are comparable, the problem reduces to two dimensions, and due to symmetry further to one dimension.…”
mentioning
confidence: 99%