Thermal characterization and stress analysis of Ho2O3 thin film on 4H–SiC substrate

Odesanya, Kazeem Olabisi; Ahmad, Roslina; Andriyana, Andri; Bingöl, Sedat; Çetinkaya, Ridvan; Wong, Yew Hoong

doi:10.1016/j.mssp.2022.107110

Cited by 2 publications

(1 citation statement)

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“…Although there have been some studies on the process of TPRT, the underlying mechanism remains unclear and needs to be explored. In addition, as mentioned above, because of the difference in the CTE between the TPRT layer and its substrate, the thermal stress is generated within the film during the thermal loading process [7], which may also affect the TCR of the TPRT sensor.…”

Section: Introductionmentioning

confidence: 99%

Effects of annealing on the microstructure and performance of thin-film Pt resistance temperature sensors: experiments and finite element simulations

Liu,

Zhang,

Cao

et al. 2024

J. Phys.: Conf. Ser.

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Platinum resistance temperature sensors have a wide range of applications in various fields, where a high temperature coefficient of resistance (TCR) is a crucial requirement. In this study, thin-film Pt resistance temperature (TPRT) sensors were fabricated on an Al2O3 substrate using a micro-electro-mechanical system (MEMS) based surface micromachining process, and Pt resistance wafers were annealed at a temperature range from 500°C to 800°C using rapid thermal process (RTP). Experimental and simulation results show that TPRT sensors fabricated on the substrate with a rough surface exhibit lower thermal stress. Meanwhile, more pores appear in the Pt thin film, reducing TCR. However, high temperature annealing significantly influences the microstructure of the Pt film and brings about an obvious increase in TCR despite, introducing thermal stress at the interface. Considering the impact of the heat treatment process, the fabricated TPRT sensors demonstrate excellent performance with a TCR of 3512 ppm/°C.

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Section: Introductionmentioning

confidence: 99%