Thermal comparison of long-wavelength vertical-cavitysurface-emitting laser diodes

Piprek, Joachim; Yoo, Sun-Kook

doi:10.1049/el:19940589

Cited by 32 publications

(15 citation statements)

References 7 publications

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“…The temperature dependent device parameters tj, , and 'th change with rising current I and affect the emitted light power P(I) = h c0 i (I -IIh) / e (16) The influence •f the heat source distribution on the resulting P1 curves is shown in Fig. 10 But, comparing curve (a) in Fig.…”

Section: Light Powermentioning

confidence: 99%

“…Dielectric bottom mirrors, e.g., Si/Si02 within a hole etched into the substrate need only a few layers, but the thermal resistance in top-down mounting is high, too. 16 Material choices for dielectric top DBRs mostly include amourphous Silicon with high refractive index but low thermal conductivity and high optical absorption. Thus, SiC was proposed'7 to replace Si.…”

Section: Device Considerationsmentioning

confidence: 99%

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<title>Modeling light versus current characteristics of long-wavelength VCSELs with various DBR materials</title>

et al. 1995

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Long-wavelength vertical-cavity surface-emitting lasers (LW-VCSELs) are investigated using electro-thermal, optical, and electronic modeling. The strain-compensated InGaAsP multi-quantum-well active region of the device example is vertically sandwiched between various distributed Bragg reflectors (DBRs). InP/InGaAsP, Si/Si02, and GaAs/AlAs mirrors are considered as well as novel combinations like SiC/MgO. The model includes nonuniform current injection, distributed heat sources, temperature dependent material properties, and k•p band structure calculations. Device parameters such as thermal resistance, threshold current, and external quantum efficiency are compaied and heating effects are evaluated. Simulated light power vs. current characteristics exhibit the typical thermal roll-over in continuous wave operation. The complex influence of the DBB materials is analyzed in detail.

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Section: Light Powermentioning

confidence: 99%

Section: Device Considerationsmentioning

confidence: 99%

<title>Modeling light versus current characteristics of long-wavelength VCSELs with various DBR materials</title>

et al. 1995

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“…3 (2001) The maximum temperature rise for a 10 mm VCSEL with a 3/4 l-cavity is 8.3 K leading to a thermal resistance of 4150 KW --1 . This value is about four to five times larger than calculated resistances of long-wavelength VCSELs with comparable diameter and AlAs/GaAs Bragg mirrors [10]. The 5 mm BTJ-VCSEL with the same cavity length shows a temperature rise of 4.9 K. For an optical cavity length of 5/4 l, this value is lowered to 3.6 K. The corresponding thermal resistances are 5760 KW --1 and 4230 KW --1 , respectively.…”

Section: Thermal Device Resistancementioning

confidence: 85%

Thermal Conductivity Analysis and Device Performance of 1.55 ?m InGaAlAs/InP Buried Tunnel Junction VCSELs

Ortsiefer

Shau

Böhm

et al. 2001

phys. stat. sol. (a)

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Subject classification: 42.55. Pz; 65.90.+i; 66.70.+f; S7.11; S7.12 The thermal resistance of InGaAlAs/InP long-wavelength VCSELs with buried tunnel junctions is investigated by means of a heat flow finite element analysis. Because of the low thermal conductivity of InP based compound layers, a significant improvement is obtained for a top-down mounted structure with a hybrid dielectric-metal back mirror and an InP heat spreading layer. Experimental results for such lasers show cw operation up to 75 C with a maximum power exceeding 2 mW at room temperature for 17 mm diameter. The temperature behavior of the threshold current indicates a substantial improvement for laser operation at values even far beyond room temperature by adjusting cavity mode and spectral gain.

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“…When grown using InP/InGaAsP, VCSELs have poor performance due to the high thermal sensitivity and refractive index properties of the materials. 1 One of the most promising, albeit complex, approaches has been to use wafer fusion, in which the active region grown on an InP substrate and the distributed Bragg reflectors grown on GaAs are bonded together to form the VCSEL. 2 In order to ensure reliability and reproducibility, and to overcome the limitations of the InP/InGaAsP material system, there is interest in developing alternative structures based on GaAs, especially since GaAs-based technology is generally more advanced than that of InP.…”

mentioning

confidence: 99%

Long wavelength (1.3 and 1.5 μm) photoluminescence from InGaAs/GaPAsSb quantum wells grown on GaAs

Dowd

Braun

Smith

et al. 1999

Applied Physics Letters

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Room temperature photoluminescence at wavelengths between 1.2 and 1.5 μm has been observed in samples consisting of InGaAs/GaPAsSb quantum well structures grown on GaAs. The emission wavelength is varied primarily by changing the composition within the GaPAsSb layer. It is proposed that such long wavelength emission results from a spatially indirect interband transition in the type-II quantum wells where the electron and hole wave functions have large spatial overlap.

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Thermal comparison of long-wavelength vertical-cavitysurface-emitting laser diodes

Cited by 32 publications

References 7 publications

<title>Modeling light versus current characteristics of long-wavelength VCSELs with various DBR materials</title>

<title>Modeling light versus current characteristics of long-wavelength VCSELs with various DBR materials</title>

Thermal Conductivity Analysis and Device Performance of 1.55 ?m InGaAlAs/InP Buried Tunnel Junction VCSELs

Long wavelength (1.3 and 1.5 μm) photoluminescence from InGaAs/GaPAsSb quantum wells grown on GaAs

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