Thermal Conductivity Analysis and Device Performance of 1.55 ?m InGaAlAs/InP Buried Tunnel Junction VCSELs

Abstract

Subject classification: 42.55. Pz; 65.90.+i; 66.70.+f; S7.11; S7.12 The thermal resistance of InGaAlAs/InP long-wavelength VCSELs with buried tunnel junctions is investigated by means of a heat flow finite element analysis. Because of the low thermal conductivity of InP based compound layers, a significant improvement is obtained for a top-down mounted structure with a hybrid dielectric-metal back mirror and an InP heat spreading layer. Experimental results for such lasers show cw operation up to 75 C with a maximum power exceeding 2 mW at room temperature for 17 mm diameter. The temperature behavior of the threshold current indicates a substantial improvement for laser operation at values even far beyond room temperature by adjusting cavity mode and spectral gain.

Semiconductor saturable absorber mirror with wavelength tailored distributed Bragg reflector

“…Reflectivity of 99.9% has been achieved with 35 layer pairs. More recently, these DBRs have been successfully employed as cavity mirrors of 1.5 mm surface emitting lasers [14,15]. We have adopted the same approach in this work and fabricated AlGaInAs/InP DBRs in an attempt to develop wavelength-tunable SESAMs at 1.5 mm.…”

InP‐based long‐wavelength vertical‐cavity surface‐emitting lasers with buried tunnel junction

“…Both the peak gain wavelength and cavity resonance wavelength shift to longer wavelengths with increasing temperature. The rates are about 0.5 nm/K and 0.1 nm/K for the gain and the cavity mode, respectively [29]. In addition, the peak net gain deteriorates with rising temperature due to Fermi spreading and increased non-radiative Auger recombination.…”