Thermal Conductivity and Heat Transfer in Superlattices

Chen, G.; Neagu, Maria; Borca‐Tasciuc, Theodorian

doi:10.1557/proc-478-85

Cited by 25 publications

(28 citation statements)

References 14 publications

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“…Fig.2 (b) shows a temperature jump occurring at the interface in the simulation system, which was resulted from the contact of two dissimilar materials, even though the interface might be considered as a perfect contact. Just as the experimental results from other studies on superlattices, the existence of a temperature jump at an interface was clearly observed [20,31,32].…”

Section: -1 Heat Flux and Temperature Jumpsupporting

confidence: 70%

Thermal boundary resistance at an epitaxially perfect interface of thin films

Choi

Maruyama

2005

International Journal of Thermal Sciences

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At the interfaces in an ideal epitaxial superlattice, it may be expected that there exists no thermal boundary resistance (TBR) due to thermal motions because the interfaces are atomically perfect. However, recent researches reported that the TBR still exists at the epitaxial interfaces of superlattices. Our previous study suggested the model, which was named as the C-M model, to predict accurately the TBR at an interface by considering a mass ratio between two species. In this study, we incorporated the effect due to an intermolecular potential well ratio into the previous model. The updated C-M model was based on the classical theory of a wave reflection and transmission, and provided an excellent agreement with the results of the molecular dynamics (MD) simulation. Furthermore, it suggests no TBR condition at an interface in superlattices.

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Section: -1 Heat Flux and Temperature Jumpsupporting

confidence: 70%

Thermal boundary resistance at an epitaxially perfect interface of thin films

Choi

Maruyama

2005

International Journal of Thermal Sciences

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“…When l 0 < b, the superlattice resistance is just a sum of the thermal resistances of successive layers and the Kapitza resistances of successive interfaces. According to Chen and Neagu (1997), for any superlattice, there exists its critical thickness, below which thermal conductivity is strongly influenced by interface scattering and above it-by scattering centres.…”

Section: Discussion Of Equations Describing Heat Transportmentioning

confidence: 99%

An impact of multi-layered structures of modern optoelectronic devices on their thermal properties

Gęsikowska

Nakwaski

2007

Opt Quant Electron

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Phonon scattering at layer boundaries reducing efficiency of heat extraction from volumes of modern multi-layered electronic devices is believed to be one of the most important obstacles to their further miniaturization. Therefore the main goal of this work is to examine theoretically thermal conductivities of thin semiconductor layers as a function of their thickness using, as a typical example, the GaAs layer between two AlAs or (AlGa)As layers. Applicability of various possible theoretical approaches to a heat transport in such a structure is discussed. However, theory of the nanoscale thermal transport has been found to be still at an immature stage. Nevertheless, following the phonon-radiative-transfer approach of Chen and Tien derived from the Boltzmann transport equation, the RT (=300 K) GaAs thermal conductivity has been found to be dramatically reduced from its bulk value of 44 W/mK, to only 1.05 W/mK for the 20-nm layer and even to 0.15 W/mK for 2-nm layer, which is in a general agreement with experimental results. However, this approach has happened to give distinctly incorrect results for relatively small composition changes of successive layers. Then reasonable values of effective thermal conductivities should be extracted from thermal conductivities determined experimentally for similar devices.

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“…Although it can be determined by the aforementioned multiple striped 3v method, the flow of the thermal energy in the cross-plane direction complicates the profiling. Several methods minimizing the effect of cross-plane heat conduction can be employed, especially when the in-plane thermal properties are of primary concern [68][69][70][71].…”

Section: In-plane Thermal Conductivity Measurementsmentioning

confidence: 99%

Thermal Properties and Heat Transport in Silicon‐Based Nanostructures

Chang

Tsybeskov

2010

Silicon Nanocrystals

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IntroductionFor the past 40 years, crystalline Si (c-Si) continues to be the major material for microelectronics, and modern silicon technology is superior compared to other semiconductors (e.g., II-VI and III-V compounds). In addition to the unique electronic and structural properties of bulk c-Si, silicon dioxide (SiO 2 ) and Si/SiO 2 interfaces, single-crystal Si possesses one of the best known lattice thermal conductivity [1,2]. This exceptional heat conductance is critically important for Si device heat management and circuit reliability. However, most of the modern complementary metal-oxide-semiconductor (CMOS) platforms are no longer single-crystal Si wafers but rather thin layers of Si-on-insulator (SOI), ultrathin strained Si and SiGe heterostructures that are the foundation of SiGe bipolar transistors (HBTs), and high-mobility metal-oxide-semiconductor field-effective transistors (MOSFETs). Major properties of these Si-based nanostructures are very different from those of bulk c-Si. For example, thermal conductivity in ultrathin SOI layers, SiGe alloys, and Si/SiGe nanostructures could be reduced by more than an order of magnitude compared to that in c-Si [3-6], and heat dissipation has become an important issue for modern nanoscale electronic devices and circuits. Thus, the understanding and improvement of heat management in Si-based nanostructures is critically important for the evolution of microelectronic industry.On the other hand, many interesting applications of nanostructured Si (ns-Si) in photonic devices and CMOS-compatible light emitters were recently discussed [7][8][9][10][11]. These ns-Si materials and devices can be produced by electrochemical anodization (i.e., porous Si [12]), chemical vapor deposition (CVD) using thermal decomposition of SiH 4 [13-15], Si ion implantation into a SiO 2 matrix [16], and deposition of amorphous Si/SiO 2 layers followed by thermal crystallization [17][18][19]. These ns-Si materials and devices produce an efficient and tunable light emission in the near-infrared and visible spectral region [20,21]. Also, it has been shown that under photoexcitation with energy density >10 mJ/cm 2 , optical gain is possibly Silicon Nanocrystals: Fundamentals, Synthesis and Applications. Edited by Lorenzo Pavesi and Rasit Turan

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Thermal Conductivity and Heat Transfer in Superlattices

Cited by 25 publications

References 14 publications

Thermal boundary resistance at an epitaxially perfect interface of thin films

Thermal boundary resistance at an epitaxially perfect interface of thin films

An impact of multi-layered structures of modern optoelectronic devices on their thermal properties

Thermal Properties and Heat Transport in Silicon‐Based Nanostructures

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