Thermal correlation between measurements and FEM simulations in 3D ICs

Souare, Papa Momar; Crecy, F. de; Fiori, Vincent; Jamaa, Haykel Ben; Farcy, A.; Gallois-Garreignot, Sebastien; Borbély, András; Colonna, Jean-Philippe; Coudrain, P.; Giraud, B.; Laviron, C.; Chéramy, S.; Tavernier, C.; Michailos, Jean

doi:10.1109/3dic.2013.6702362

Cited by 4 publications

(5 citation statements)

References 2 publications

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“…where T is the temperature, a is the ellipse parameter, and β is a parameter fixed to 0.5 [5], determined by optimizing the model. To have the most predictive numerical model possible in relation to 150 runs of DOE, the choice to model the behavior of the temperature with a hyperbolic function was done.…”

Section: Resultsmentioning

confidence: 99%

“…In this paper, the top heat-transfer coefficient is fixed at 8 W/(m 2 · K), which models natural convection with air. Note that this quite low value limits the heat dissipation and does not have impact on trends [5]. …”

Section: B Sensitivity Studymentioning

confidence: 98%

“…Both the measurements and simulations are compared. The boundary conditions of the simulations are chosen such that on the top surface, a convection coefficient h is equal to 8 W/m 2 · K to model the natural convection and in the bottom surface, a convection coefficient h equal to 1230 W/m 2 · K is determined to fit FEM simulations with experimental results [5] by retro simulation. As discussed earlier, this high value physically corresponds to a conduction case.…”

Section: B Functionnal Measurementmentioning

confidence: 99%

“…To study this phenomenon, a dedicated thermal test chip has been designed and fabricated [3], [5]. It is formed by the stacking of a 7.5 mm 2 chip (top die) on a 31 mm 2 chip (bottom die) using μ-bumps and TSV-middle in a face-to-back configuration, as commonly used for wide I/O products [9] (Figs.…”

Section: Test Chipmentioning

confidence: 99%

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Thermal Effects of Silicon Thickness in 3-D ICs: Measurements and Simulations

Souare

Fiori

Farcy

et al. 2014

IEEE Trans. Compon., Packag. Manufact. Technol.

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International audienceThis paper presents the impact of silicon thickness on the temperature and the thermal resistance in a 3-D stack integrated circuits. This paper uses electrical measurements thanks to embedded in situ sensors and numerical design of experiments (DOEs). The primary objective is to provide the sensitivity of modeling factors by analyzing the variance on the basis of Sobol indices through DOE. The results show a strong influence of the silicon thickness and of the position of the hot spots with respect to the sensors on the maximum temperature and the thermal resistance of the total stack. The boundary conditions, in particular the heat-transfer coefficient of the bottom surface of the wafer, are also identified as significant factors. Therefore, simulation results and measurement approaches are compared. The measurements are carried out with embedded in situ sensors in the bottom die at wafer level. The results show a significant increase in temperature while decreasing the silicon thickness

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Section: Resultsmentioning

confidence: 99%

Section: B Sensitivity Studymentioning

confidence: 98%

Section: B Functionnal Measurementmentioning

confidence: 99%

Section: Test Chipmentioning

confidence: 99%

See 2 more Smart Citations

Thermal Effects of Silicon Thickness in 3-D ICs: Measurements and Simulations

Souare

Fiori

Farcy

et al. 2014

IEEE Trans. Compon., Packag. Manufact. Technol.

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“…The first step is to reproduce the measured thermal response to the steady and pulsed power inputs, according to the TCAD model calculation with the finite element method [21]. We calibrate the convective boundary conditions based on the measured thermal response to the steady power input.…”

Section: Thermal Modeling Methodologymentioning

confidence: 99%

Effective thermal modeling of a thin film snubber resistor for power modules

Watanabe

Izawa

Kajiya

et al. 2020

NOLTA

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This paper proposes an effective thermal compact modeling method for a thin film resistor that is dedicated for snubber circuits in power electronic modules. The objective compact model consists of thermal capacitors and thermal resistors. Some of the objective compact models express the effects of local air gaps as well as convective boundary conditions, which are natively non-linear phenomena. To identify their values, we use the surface temperature response of the thin film resistor to the input power. The experimental results show that the derived compact thermal model robustly causes the measured thermal durability to wide input power pulse width variations to reappear.

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