Thermal cycling reliability of polycrystalline diamond and aluminium nitride substrates

Impact of poly-crystalline diamond within power semiconductor device modules in a converter

“…From the physical parameters of the coolant and flow rate, the Nasselts number is obtained whether the fluid is in turbulent or laminar flow. From this, the thermal resistance of the equivalent resistive network is solved (10)(11)(12)(13)(14)(15) where the total thermal resistance is given by (16) and heat transfer coefficient for the heatsink is obtained [21]. Depending on the footprint of the power module and the required heat sink area, the module/heatsink assembly is sized.…”

“…To analyses the impact of polycrystalline diamond, equations (1)(2)(3)(4)(5)(6)(7)(8)(9)(10)(11)(12)(13)(14)(15)(16)(17)(18)(19) are implemented into Mathworks Matlab. For this analysis, a 1200V 100A SemiTrans2 [16] module was used as the base line IGBT technology for each phase leg of the converter.…”

“…These have shown improved thermal performance of the substrate medium; however, due to the binding materials, these do not achieve the full potential that diamond can offer. Simulation and small scale electrical results have been previously reported for dies attached to Chemical Vapor Deposited (CVD) and polycrystalline diamond [11][12] [13], demonstrating improvements diamond can offer in terms of thermal resistance by means of small scale electrical measurements or numerical modelling. In this paper the performance of a diamond demonstrator consisting of silicon and silicon carbide power devices attached to a metallized polycrystalline diamond substrate is investigated.…”