Thermal dissociation of InP covered with metallic contact layers

Mojzes, I.; Veresegyházy, R.; Malina, V.

doi:10.1016/0040-6090(86)90067-2

Cited by 15 publications

(4 citation statements)

References 28 publications

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“…EGA measurements confirmed that the presence of an Au-Be layer on the surface of InP enhances the thermal decomposition of InP. As can be seen from figure 1, the total quantity of evolved phosphorus (which equals the integrated area under the curves P 2 and P 4 ; see Mojzes et al 1986) increases proportionally with the thickness of the Au-Be layer. Therefore, to reduce this undesirable reaction during the thermal processing of contacts, the thickness of the Au-Be contact layer must be minimized.…”

Section: Effect Of Au-be Contact Layer Thicknessmentioning

confidence: 53%

“…In this case, the measurements were performed with a Leybold INA 3 apparatus. In addition, the interaction between the Au-Be contact layer and the InP substrate as a function of the Au-Be thickness was also investigated by means of in situ evolved gas analysis (EGA) (Mojzes et al 1986).…”

Section: Methodsmentioning

confidence: 99%

“…Evolved gas analysis (EGA) experiments showed that gold-based metallizations deposited on the surface of InP greatly enhance the thermal decomposition of the semiconductor, the total quantity of evolved phosphorus being roughly proportional to the quantity of gold (Mojzes et al 1986). Moreover, a strong tendency of Au to migrate in depth into the InP substrate during the alloying of contacts was also reported; it was found that the diffusion depth of Au is directly proportional to the thickness of gold-based contact layer (Camlibel et al 1982).…”

Section: Introductionmentioning

confidence: 99%

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Au - Be/Ru/Au multilayer metallization as a stable ohmic contact scheme to p-type InP

Malina¹,

Moro²,

Micheli³

et al. 1996

Semicond. Sci. Technol.

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An attempt has been made to improve the electrical and metallurgical stability of Au-Be alloyed contacts to moderately doped p-type InP by minimizing the thickness of the Au-Be contact layer and using an Ru layer as a new, more effective diffusion barrier between the Au-Be and a thick Au top layer. It was found that the Au-Be contact layer only 40-50 nm thick is sufficient to give excellent ohmic contacts with specific contact resistance values as low as 2 × 10 −8 and 7 × 10 −8 m 2 (for N A -N D = (3-4) × 10 24 and (0.8-1) × 10 24 m −3 respectively). When subjected to an aging test at 280 • C for 50 h in N 2 gas, the 50 nm Au-Be/50 nm Ru/300 nm Au contacts alloyed at an optimum temperature of about 425 • C exhibit good thermal stability and no substantial increase in the specific contact resistance. The remarkable metallurgical stability of such contacts was confirmed by secondary neutral mass spectroscopy (SNMS) in-depth profile measurements. A comparison with the previously investigated diffusion barrier metals (such as Cr, Ti, Pt, etc) shows that the Ru layer is a much better barrier against the migration of Au into the InP substrate and, at the same time, it suppresses the out-diffusion of In and P from the semiconductor.

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Section: Effect Of Au-be Contact Layer Thicknessmentioning

confidence: 53%

Section: Methodsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Au - Be/Ru/Au multilayer metallization as a stable ohmic contact scheme to p-type InP

Malina¹,

Moro²,

Micheli³

et al. 1996

Semicond. Sci. Technol.

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show abstract

“…To obtain ohmic properties and low specific contact resistance values, such contacts must be alloyed at temperatures of about 400-425OC. However, during this heat treatment of contacts, a strong metallurgical interaction between the Au, In and P takes place at the contact-semiconductor interface, especially when goldbased metallizations are evaporated in thick layers (6,7). As a result, non-planar spiking reaction fronts are formed with a deep protrusion of Au into the semiconductor, which can cause a degradation of contacts and device reliability problems (7).…”

Section: General Approachmentioning

confidence: 99%