Thermal donor formation in silicon enhanced by high-energy helium irradiation

Hazdra, P.; Komarnitskyy, V.

doi:10.1016/j.nimb.2006.10.038

Cited by 14 publications

(12 citation statements)

References 12 publications

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“…In the entire irradiated region, the generation rate of oxygen thermal donors (TDs) may be increased due to the induced radiation defects. Such radiation-enhanced thermal donors (RETDs) are not specific to proton irradiation, as TD profiles in Cz Si may as well be created by helium implantation [14]. The presence of hydrogen is another enhancement factor for the generation of TDs [15,16].…”

Section: Resultsmentioning

confidence: 99%

Deep Doping Profiles in Silicon Created by MeV Hydrogen Implantation: Influence of Implantation Parameters

Laven

Schulze²,

Häublein

et al. 2011

AIP Conference Proceedings

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Composition change of stainless steel during microjoining with short laser pulse J. Appl. Phys. 96, 4547 (2004) Elemental surface analysis at ambient pressure by electron-induced x-ray fluorescence Rev. Sci. Instrum. 74, 1251 (2003 Nondestructive analysis of ultrashallow junctions using thermal wave technology Rev. Sci. Instrum. 74, 586 (2003) Images of dopant profiles in low-energy scanning transmission electron microscopy Appl. Phys. Lett. 81, 4535 (2002) Spreading-resistance profiling of silicon and germanium at variable temperature J. Appl. Phys. 92, 4809 (2002) Additional information on AIP Conf. Proc. Abstract. The impact of dose variations of protons implanted with energies in the MeV range on the concentration and depth distribution of hydrogen-related shallow donors in float zone and Czochralski silicon after annealing at 470 °C is examined with spreading resistance probe measurements. For moderate proton doses up to 10 14 cm -2 , the measured effective carrier distribution in float zone silicon correlates with the calculated distribution of the primary radiation damage caused by the penetrating protons. With increasing doses above 10 14 cm -2 , however, the effective carrier distribution significantly deviates from the distribution of the primary defects. Furthermore, the shape of the induced profiles in float zone and Czochralski silicon differ considerably. The effective carrier concentration at the maximum of the induced donor profile exhibits a linear dependency on the implanted dose after annealing around 370 °C, whereas this dependency becomes clearly sublinear when annealing at 470 °C. A temperature dependent model using two donor species is proposed which accounts for the different dose dependencies at the different annealing temperatures.

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Section: Resultsmentioning

confidence: 99%

Deep Doping Profiles in Silicon Created by MeV Hydrogen Implantation: Influence of Implantation Parameters

Laven

Schulze²,

Häublein

et al. 2011

AIP Conference Proceedings

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“…Helium irradiation has also been used for local reduction of carrier lifetime in FZ silicon power devices, 6 similarly resulting in increased n-doping at the end-of-range after irradiation, though with a lower density than with proton irradiation. In studies of oxygen-enriched FZ silicon which was irradiated with 7 MeV helium ions, [16][17][18] then annealed at 370 to 410 • C for 30 minutes, radiation enhanced donor formation was observed above 375 • C where most vacancy-related defects are annealed out, probably by formation of thermal double donors. 6 The concentration of such donors is proportional to the vacancy density and so to the helium fluence.…”

Section: P463mentioning

confidence: 99%

“…This temperature is below the threshold of ∼375 • C where oxygen thermal donors are formed in unirradiated CZ silicon 11 and where the formation of radiation enhanced thermal donors after helium irradiation in oxygen-enriched FZ wafers was observed. [16][17][18] Lines were irradiated with 500 keV protons and 1.8 MeV helium ions, which have similar ranges in silicon of 6.1 and 6.4 μm respectively. Samples were irradiated with proton fluence typically 20 times greater than helium fluences, to give similar vacancy concentration profiles.…”

Section: Comparison Of Proton and Helium Irradiation Of N-type Cz Silmentioning

confidence: 99%

Depth-Resolved Imaging of Radiation-Induced Doping Changes in Silicon

Dang

Breese

2015

ECS J. Solid State Sci. Technol.

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We present a method for imaging variations in the doping depth profile in n-and p-type silicon induced by high energy ion irradiation. This doping microscopy method is based on electrochemical anodization of irradiated wafers, producing porous silicon with a local porosity depending on doping changes. In moderately-doped n-type silicon a higher porosity corresponds to where irradiation creates excess donors and a lower porosity corresponds to where acceptors are created. Higher porosity regions may be selectively removed and so observed in cross-section images. We compare the effects of proton and helium ion irradiation on the localized doping in n-type Czochralski silicon, with and without annealing at 300 • C. Even at such a low annealing temperature, a pronounced n + doping is observed for helium irradiation, highly confined to just the irradiated volume. In comparison, proton irradiation results in weaker n + doping which extends beyond the irradiated region, attributed to hydrogen diffusion.

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“…This effect may be attributed to thermal oxygen donors (TDs) adding to the HDs observed in the oxygen lean FZ-Si. The generation rate of the TDs might be enhanced either by radiation damage [14] or by the presence of hydrogen [15,16]. The second peak emerging at 75 μm is likely to also be connected to the generation of TDs due to enhanced diffusion of oxygen in the • C, 30 h FZ-Si, 470…”

Section: Diffusion Of the Implanted Hydrogenmentioning

confidence: 99%

Dopant profiles in silicon created by MeV hydrogen implantation: Influence of annealing parameters

Laven

Schulze

Häublein

et al. 2010

Phys. Status Solidi (c)

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Dopant profiles created by MeV proton implantation in float zone and Czochralski silicon are examined with spreading resistance probe measurements after annealing in the temperature range of 300-500 °C. For the description of the profile shape, two species are used, one being the implanted and mobile hydrogen and the other being an immobile irradiation induced point defect complex. The diffusion of the implanted hydrogen through the radiation damaged layer is found to be of great relevance for the resulting depth distribution of the hydrogen related donors. An effective diffusion coefficient is given for implantation into float zone silicon. Furthermore, the profile shape varies significantly with the annealing temperature. It is proposed that two donor species are generated which each exhibit a different thermal stability, and that these two species have individual depth distributions. Profiles created in Czochralski silicon seem to be additionally affected by an enhan ced generation of oxygen thermal donor species

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Thermal donor formation in silicon enhanced by high-energy helium irradiation

Cited by 14 publications

References 12 publications

Deep Doping Profiles in Silicon Created by MeV Hydrogen Implantation: Influence of Implantation Parameters

Deep Doping Profiles in Silicon Created by MeV Hydrogen Implantation: Influence of Implantation Parameters

Depth-Resolved Imaging of Radiation-Induced Doping Changes in Silicon

Dopant profiles in silicon created by MeV hydrogen implantation: Influence of annealing parameters

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