Thermal effect of annealing-temperature on solution-processed high-<i>k</i> ZrO<sub>2</sub> dielectrics

Zhou, Shiqi; Zhang, Jianhua; Fang, Zhiqiang; Ning, Honglong; Cai, Wei; Zhu, Zhennan; Liang, Zhihao; Yao, Rihui; Guo, Dong; Peng, Junbiao

doi:10.1039/c9ra06132k

Cited by 15 publications

(7 citation statements)

References 25 publications

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“…The inverse trend between μ h vs N t is also evident as shown in Figure c. From the literature, several reports showed that annealing at 200 °C yields optimal film quality and electrical properties, such as low defects, low leakage current, and an ultrasmooth film surface. ,, A similar trend can also be found in that lower annealing temperatures result in less charge trapping and interface states in oxides. , These findings are in accordance with our AFM and TFT results; the film quality and electrical properties were optimal at the lowest oxide annealing temperature (200 °C in this study). Moreover, AlO x was observed to show the lowest N t due to the smoothest surface, while HfO x was found to be in the opposite.…”

Section: Resultsmentioning

confidence: 96%

Engineering High-k Oxide/CuSCN Interface for p-Channel Thin-Film Transistors

Waiprasoet,

Ittisanronnachai,

Worakajit

et al. 2024

ACS Appl. Electron. Mater.

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Copper(I) thiocyanate (CuSCN) is a unique coordination polymer semiconductor with excellent hole-transport properties and a wide band gap. CuSCN enables the construction of thin-film transistors (TFTs) based on a transparent p-type inorganic channel layer�a rare component. Despite the tremendous progress of TFTs based on transparent n-type oxides, the development of the p-type counterparts has been limited, especially for TFTs based on CuSCN. In this work, we explored three aspects in bottom-gate top-contact TFTs: the use of high-k metal oxides (AlO x , GaO x , and HfO x ) as the dielectric layer, organic molecules (methacrylic acid or MAA and tetraethyl orthosilicate or TEOS) as the dielectric passivation layer, and an antisolvent (tetrahydrofuran or THF) to improve the holetransport properties. The best condition was found to be AlO x annealed at 200 °C with the TEOS layer as the dielectric combined with THF-treated CuSCN as the semiconducting channel. The resulting TFTs operated under low voltages and showed a field-effect hole mobility in the range of 7−8 × 10 −3 cm 2 V −1 s −1 , representing an increase of 4-to 5-fold from the previous report. In particular, the TEOS passivation layer and THF treatment increased the mobility as a result of the reduced trap state density.

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Section: Resultsmentioning

confidence: 96%

Engineering High-k Oxide/CuSCN Interface for p-Channel Thin-Film Transistors

Waiprasoet,

Ittisanronnachai,

Worakajit

et al. 2024

ACS Appl. Electron. Mater.

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“…The peak center at 530.3 eV represents the oxygen inside the metallic oxygen ( M –O– M ), at 531.4 eV represents the oxygen in the lattice oxygen vacancy ( V O ), and 532.2 eV represents the oxygen inside the hydroxyl oxygen ( M ‐OH). [ 30 ] For convenience, we used O I , O II , and O III to represent each component area and then calculated the percentages of O I , O II , and O III to the total area of elemental oxygen, respectively, which were used to represent the content of each component, and then summarized the results in Figure 2e. We all know that metal–oxygen bonding ( M –O– M ) is favorable for high‐ k dielectric films, and it can be seen from the figure that the content of metal–oxygen, hydroxyl oxygen, and vacancy oxygen is closely related to the annealing temperature.…”

Section: Resultsmentioning

confidence: 99%

Effect of Heat Treatment on Zirconium Oxide High‐k Gate Dielectric in Silicon‐Based Metal Oxide Semiconductor Capacitors

Cai

Tuokedaerhan

et al. 2023

Physica Status Solidi (a)

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Herein, zirconia thin films are successfully prepared on silicon substrates using the sol–gel method, and the microstructure, optical, and electrical properties of zirconia high‐k gate dielectric films are analyzed at different annealing temperatures. X‐ray diffraction results show that ZrO2 films crystallize above 500 °C and the grain size increases with the increase of annealing temperature; X‐ray photoelectron spectroscopy analysis confirms that metal–oxygen bonds can be effectively formed and defects in the films are eliminated by annealing treatment, with significant changes in the valence band shift (ΔEv) and conduction band shift (ΔEc) with increasing annealing temperature. Analysis of the optical properties of the films by UV‐Vis confirms that all zirconia films have high transmittance, with the bandgap increasing from 5.54 to 5.74 eV with increasing annealing temperature. Atomic force microscope and field emission scanning electron microscope show that the film quality is better and the root mean square roughness of the zirconia films increases from 0.551 to 1.190 nm and the film thickness decreases from 176.19 to 58.73 nm with increasing annealing temperature. Electrical performance tests show that proper annealing is effective in improving electrical properties, such as obtaining a larger dielectric constant (k) and a lower leakage current density.

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“…Doping Zr improves the electrical properties of the films by replacing weak oxygen bonds in AlO x (Al-O (511 kJ•mol −1 ), Zr-O (766.1 kJ•mol −1))[53,54]. For the alumina films, the weak bonds to oxygen construct a loose oxide structure[55]. Thanks to the presence of Zr atoms, the larger atomic size (Ion radius Zr 4+ :Al 3+ = 80:50) leads to the decrease of ion conduction and makes the Zr-AlO x films more densified[19,34].…”

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confidence: 99%

Effect of Zirconium Doping on Electrical Properties of Aluminum Oxide Dielectric Layer by Spin Coating Method with Low Temperature Preparation

et al. 2020

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In recent years, significant efforts have been devoted to the research and development of spin-coated Al2O3 thin films, due to their large band gaps, high breakdown voltage and stability at high annealing temperature. However, as the alumina precursor has a large surface energy, substrates need to be treated by plasma before spin coating. Therefore, to avoid the expensive and process-complicated plasma treatment, we incorporated zirconium nitrate into the aluminum nitrate solution to decrease the surface energy of the precursor which improve the spreadability. Then, the electrical performances and the surface morphologies of the films were measured. For comparison, the pure Al2O3 films with plasma treatments were also prepared. As a result, after low temperature annealing (200 °C), the relative dielectric constant of Zr–AlOx spin-coated thin-film MIM (Metal-Insulator-Metal) devices can reach 12 and the leakage current density is not higher than 7.78 × 10−8 A/cm2 @ 1 MV/cm when the concentration of zirconium nitrate is 0.05 mol/L. The Aluminum oxide film prepared by zirconium doping has higher stability and better electrical properties than the pure films with plasma treatments and high performance can be attained under low-temperature annealing, which shows its potential application in printing and flexible electronic devices.

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Thermal effect of annealing-temperature on solution-processed high-k ZrO₂ dielectrics

Abstract: In this paper, a solution-processed zirconium oxide (ZrO2) dielectric was deposited by spin coating with varying pre-annealing temperatures and post-annealing temperatures.

Cited by 15 publications

References 25 publications

Engineering High-k Oxide/CuSCN Interface for p-Channel Thin-Film Transistors

Engineering High-k Oxide/CuSCN Interface for p-Channel Thin-Film Transistors

Effect of Heat Treatment on Zirconium Oxide High‐k Gate Dielectric in Silicon‐Based Metal Oxide Semiconductor Capacitors

Effect of Zirconium Doping on Electrical Properties of Aluminum Oxide Dielectric Layer by Spin Coating Method with Low Temperature Preparation

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Thermal effect of annealing-temperature on solution-processed high-k ZrO2 dielectrics

Abstract: In this paper, a solution-processed zirconium oxide (ZrO2) dielectric was deposited by spin coating with varying pre-annealing temperatures and post-annealing temperatures.

Cited by 15 publications

References 25 publications

Engineering High-k Oxide/CuSCN Interface for p-Channel Thin-Film Transistors

Engineering High-k Oxide/CuSCN Interface for p-Channel Thin-Film Transistors

Effect of Heat Treatment on Zirconium Oxide High‐k Gate Dielectric in Silicon‐Based Metal Oxide Semiconductor Capacitors

Effect of Zirconium Doping on Electrical Properties of Aluminum Oxide Dielectric Layer by Spin Coating Method with Low Temperature Preparation

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Thermal effect of annealing-temperature on solution-processed high-k ZrO₂ dielectrics