Thermal effects in oxide Tf&lt;inf&gt;T&lt;/inf&gt;s

Mourey, Devin A.; Zhao, Dalong; Fok, Ho Him R.; Li, Yuanyuan V.; Jackson, Thomas N.

doi:10.1109/drc.2010.5551976

Cited by 6 publications

(2 citation statements)

References 4 publications

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“…7a and c at high drain and gate biases can be attributed to self-heating effect. 67,68 The extracted device parameters of the TFTs are listed in Table III. A comparison of the device parameters shows that TFTs with the SiO 2 / Nr-stoic SiN bilayer gate stack exhibit better performance than those using the SiO 2 /N-rich SiN bilayer gate stack.…”

Section: Zno Tfts With Bilayer Gate Dielectric Stack-mentioning

confidence: 99%

Impact of Near-Stoichiometric Silicon Nitride Gate Insulator on the Performance of MOCVD-Grown ZnO Thin-Film Transistors

Remashan

Choi

Park

et al. 2012

ECS J. Solid State Sci. Technol.

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ZnO Thin-film transistors (TFTs) on glass substrates were fabricated using plasma-deposited silicon nitride (SiN) gate insulators having two different compositions, namely nitrogen-rich and near-stoichiometric. The ZnO films were grown by metal organic chemical vapor deposition. The TFTs using near-stoichiometric SiN gate insulator exhibit better performance compared to those using nitrogen-rich SiN, and the performance improvement can be attributed to hydrogenation of the ZnO channel region by the gate dielectric. The positive impact of near-stoichiometric SiN gate insulator on TFT performance is further demonstrated in two more different types of ZnO TFTs. The two different types of TFTs are TFTs using a bilayer gate dielectric stack and TFTs using a MgZnO layer at channel/gate dielectric interface. Both types of TFTs exhibited excellent device characteristics.

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Section: Zno Tfts With Bilayer Gate Dielectric Stack-mentioning

confidence: 99%

Impact of Near-Stoichiometric Silicon Nitride Gate Insulator on the Performance of MOCVD-Grown ZnO Thin-Film Transistors

Remashan

Choi

Park

et al. 2012

ECS J. Solid State Sci. Technol.

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“…Atomic layer deposition of TFT devices has been shown to have advantages over other techniques such as sputtered and PLD films [10]. ALD allows a level of control of growth conditions that are repeatable, highly tunable, at temperatures near room temperature [11].…”

mentioning

confidence: 99%

Interface control and electron transport in ALD ZnO/Al₂O₃ TFTs studied by gated Hall effect

Anders

Leedy

Kazimierczuk

et al. 2021

Semicond. Sci. Technol.

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Many challenges exist in understanding transport properties in metal-oxide thin film transistors (MO-TFTs). Microstructural disorder, dielectric/active layer interface trap states, and grain boundaries contribute to reductions in device properties such as transistor output current, mobility, and sheet carrier concentration. In this work, we use scheduled interruptions during atomic layer deposition combined with a series of thermal anneals to control properties of ZnO/ A l 2 O 3 TFTs, and to experimentally decouple physical effects within the TFT affecting device performance. Using concurrent current–voltage and gated Hall effect measurements, we observe two sets of trends for these devices. In the first, increasing post-temperature anneal is shown to improve the device characteristics by reducing grain boundary effects. In the second, exposure to ambient conditions is shown to increase the number of interface trap states. Comparisons of measured values show that these trap states enhance some properties of the lower temperature annealed series, while degrading these values in the higher temperature annealed series. We show that this is due to devices acting in two separate transport regimes: localized, and non-localized. We investigate the position of the Fermi level, adjusted by gate bias, to these two regimes under each test condition, and suggest a simple model to describe the results.

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Applications of Oxide Thin Film Transistors

2024

Oxide Thin Film Transistors

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Thermal effects in oxide Tf<inf>T</inf>s

Cited by 6 publications

References 4 publications

Impact of Near-Stoichiometric Silicon Nitride Gate Insulator on the Performance of MOCVD-Grown ZnO Thin-Film Transistors

Impact of Near-Stoichiometric Silicon Nitride Gate Insulator on the Performance of MOCVD-Grown ZnO Thin-Film Transistors

Interface control and electron transport in ALD ZnO/Al₂O₃ TFTs studied by gated Hall effect

Applications of Oxide Thin Film Transistors

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Thermal effects in oxide Tf<inf>T</inf>s

Cited by 6 publications

References 4 publications

Impact of Near-Stoichiometric Silicon Nitride Gate Insulator on the Performance of MOCVD-Grown ZnO Thin-Film Transistors

Impact of Near-Stoichiometric Silicon Nitride Gate Insulator on the Performance of MOCVD-Grown ZnO Thin-Film Transistors

Interface control and electron transport in ALD ZnO/Al2O3 TFTs studied by gated Hall effect

Applications of Oxide Thin Film Transistors

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Product

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About

Interface control and electron transport in ALD ZnO/Al₂O₃ TFTs studied by gated Hall effect