Thermal effects on light-emission properties of GaN LEDs grown by metal-organic vapor phase epitaxy

Honda, Toshio; Kobayashi, Toshiaki; Egawa, Shinichi; Sawada, Masaru; Sugimoto, Koichi; Baba, Taichi

doi:10.1016/j.jcrysgro.2006.10.208

Cited by 3 publications

(6 citation statements)

References 8 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…On the other hand, ST-LEDs can reduce crosstalk because of their waveguide-less structure. It has been reported that a pseudo-heterostructure was realized in GaN-based UV ST-LEDs by using thermal energy [3]. The thermal energy generation, which is observed as an increase of temperature, was confirmed using a thermocouple on the Schottky contact.…”

Section: Introductionmentioning

confidence: 83%

“…The excitation power density was approximately 26 mW/cm 2 . The PL results were then used to estimate the temperature of emission layer in ST-LEDs [3].…”

Section: Article In Pressmentioning

confidence: 99%

“…The band offset was a result of thermal energy generated in the emission area. The band offsets were estimated using the thermocouple temperature on the Schottky contact and PL emission peaks observed above RT [3]. The three solid lines (A)-(C) shown in Fig.…”

Section: Relationship Between Output Power and Band Offsetmentioning

confidence: 99%

See 2 more Smart Citations

Excitonic absorption in GaN layers of GaN-based UV Schottky-type light-emitting diodes grown by metal–organic vapor phase epitaxy

Komiyama

Kazuyuki

Suzuki

et al. 2008

Journal of Crystal Growth

Self Cite

View full text Add to dashboard Cite

Section: Introductionmentioning

confidence: 83%

“…The excitation power density was approximately 26 mW/cm 2 . The PL results were then used to estimate the temperature of emission layer in ST-LEDs [3].…”

Section: Article In Pressmentioning

confidence: 99%

See 1 more Smart Citation

Excitonic absorption in GaN layers of GaN-based UV Schottky-type light-emitting diodes grown by metal–organic vapor phase epitaxy

Komiyama

Kazuyuki

Suzuki

et al. 2008

Journal of Crystal Growth

Self Cite

View full text Add to dashboard Cite

“…Article ergy in the ST-LEDs has been reported [7]. However, internal absorption loss still occurs in such a structure.…”

Section: Contributedmentioning

confidence: 99%

Fabrication of GaN‐based Schottky‐type light‐emitting diodes for micropixels in flat‐panel displays

Honda

Kobayashi

Komiyama

et al. 2008

Phys. Status Solidi (c)

View full text Add to dashboard Cite

Microsize integrated light‐emitting diodes (LEDs) that operate in the UV spectral region were fabricated using GaN layers grown on sapphire substrates by metal‐organic vapor phase epitaxy (MOVPE). Schottky‐type (ST) and metal‐oxide‐semiconductor (MOS) LEDs were realized. The near‐band‐edge emission of GaN was observed in the electroluminescent spectra with reversed bias under pulsed‐voltage conditions. The insertion of an aluminum oxide layer in the GaN‐based LED led to an increase in electroluminescent intensity. The internal optical absorption in the GaN layer of the GaN‐based ST‐LEDs was also estimated to be 75% of the emission light power. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

show abstract

“…This is due to the thermal energy generated during the light emission being emitted from the GaN layer. 4 The thermal-energy generation was confirmed using a thermocouple on the small electrode. The changes in temperature during light emission were in agreement with the peak energy of the PL spectrum observed above RT.…”

Section: Gan-based Schottky Ledsmentioning

confidence: 99%

Fabrication of GaN-based metal-oxide-semiconductor light-emitting diodes operating in ultraviolet spectral region

Honda

Kobayashi

Komiyama

et al. 2007

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

View full text Add to dashboard Cite

Integrated light-emitting diodes (LEDs) that operate in the UV spectral region were fabricated using GaN layers grown on sapphire substrates by metal-organic vapor phase epitaxy. Schottky-type LEDs and metal-oxide-semiconductor (MOS) LEDs were realized. The near-band-edge emission of GaN was observed in the electroluminescent spectra with reversed bias under pulsed-voltage conditions. The insertion of an aluminum oxide layer in the GaN-based LED leads to an increase in electroluminescent intensity.

show abstract

Thermal effects on light-emission properties of GaN LEDs grown by metal-organic vapor phase epitaxy

Cited by 3 publications

References 8 publications

Excitonic absorption in GaN layers of GaN-based UV Schottky-type light-emitting diodes grown by metal–organic vapor phase epitaxy

Excitonic absorption in GaN layers of GaN-based UV Schottky-type light-emitting diodes grown by metal–organic vapor phase epitaxy

Fabrication of GaN‐based Schottky‐type light‐emitting diodes for micropixels in flat‐panel displays

Fabrication of GaN-based metal-oxide-semiconductor light-emitting diodes operating in ultraviolet spectral region

Contact Info

Product

Resources

About