2012
DOI: 10.1063/1.4773464
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Thermal electric effects in Fe|GaAs|Fe tunnel junctions

Abstract: We study the spin polarized thermoelectric effects on Fe|GaAs|Fe tunnel junction using a generalized Landauer-Büttiker formalism, where the energy flow is described on the same footing as the electric current. The Seebeck coefficient of tunnel junction will change sign as the GaAs thickness increases. We demonstrate the thermally induced STT on Fe|GaAs|Fe tunnel junction is robust against the interfacial defects and is non-negligible

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Cited by 7 publications
(2 citation statements)
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“…Ab initio calculations have been performed for MgObased MTJs, where the TMT dependence on temperature was computed [21,26,27], and which has been used to understand previously mentioned experiments [14]. Similar calculations have been performed for GaAs-based MTJs [28]. Also, inspired by an aforementioned experiment [13], theoretical descriptions of thermal spin transport for ferromagnet/insulator/semiconductor MTJs have also been developed [22,29].…”
Section: Introductionmentioning
confidence: 99%
“…Ab initio calculations have been performed for MgObased MTJs, where the TMT dependence on temperature was computed [21,26,27], and which has been used to understand previously mentioned experiments [14]. Similar calculations have been performed for GaAs-based MTJs [28]. Also, inspired by an aforementioned experiment [13], theoretical descriptions of thermal spin transport for ferromagnet/insulator/semiconductor MTJs have also been developed [22,29].…”
Section: Introductionmentioning
confidence: 99%
“…14 Similar calculations have been performed for GaAs-based MTJs. 28 Also inspired by an aforementioned experiment, 13 theoretical descriptions of thermal spin transport for ferromagnet/insulator/semiconductor MTJs have also been developed. 22,29 Finally, theory regarding all metallic junctions has as well been recently studied.…”
Section: Introductionmentioning
confidence: 99%