Thermal evolution of extended defects in implanted Si:

Claverie, A.; Colombeau, B.; Assayag, Gérard; Bonafos, Caroline; Cristiano, F.; Omri, M.; Mauduit, B. de

doi:10.1016/s1369-8001(00)00043-3

Cited by 67 publications

(38 citation statements)

References 33 publications

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“…20 The interstitials evolve into interstitial clusters, ͕311͖ defects, and eventually dislocation loops, 21 at which point the transient enhanced diffusion stops. The decrease in boron diffusion coefficient with increasing anneal time seen for boron peak 3 in Fig.…”

Section: Discussionmentioning

confidence: 99%

Reduced boron diffusion under interstitial injection in fluorine implanted silicon

Kham

Maťko

Chenevier

et al. 2007

Journal of Applied Physics

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Point defect injection studies are performed to investigate how fluorine implantation influences the diffusion of boron marker layers in both the vacancy-rich and interstitial-rich regions of the fluorine damage profile. A 185 keV, 2.3ϫ 10 15 cm −2 F + implant is made into silicon samples containing multiple boron marker layers and rapid thermal annealing is performed at 1000°C for times of 15-120 s. The boron and fluorine profiles are characterized by secondary ion mass spectroscopy and the defect structures by transmission electron microscopy ͑TEM͒. Fluorine implanted samples surprisingly show less boron diffusion under interstitial injection than those under inert anneal. This effect is particularly noticeable for boron marker layers located in the interstitial-rich region of the fluorine damage profile and for short anneal times ͑15 s͒. TEM images show a band of dislocation loops around the range of the fluorine implant and the density of dislocation loops is lower under interstitial injection than under inert anneal. It is proposed that interstitial injection accelerates the evolution of interstitial defects into dislocation loops, thereby giving transient enhanced boron diffusion over a shorter period of time. The effect of the fluorine implant on boron diffusion is found to be the opposite for boron marker layers in the interstitial-rich and vacancy-rich regions of the fluorine damage profile. For marker layers in the interstitial-rich region of the fluorine damage profile, the boron diffusion coefficient decreases with anneal time, as is typically seen for transient enhanced diffusion. The boron diffusion under interstitial injection is enhanced by the fluorine implant at short anneal times but suppressed at longer anneal times. It is proposed that this behavior is due to trapping of interstitials at the dislocation loops introduced by the fluorine implant. For boron marker layers in the vacancy-rich region of the fluorine damage profile, suppression of boron diffusion is seen for short anneals and then increased diffusion after a critical time, which is longer for inert anneal than interstitial injection. This behavior is explained by the annealing of vacancy-fluorine clusters, which anneal quicker under interstitial injection because the injected interstitials annihilate vacancies in the clusters.

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Section: Discussionmentioning

confidence: 99%

Reduced boron diffusion under interstitial injection in fluorine implanted silicon

Kham

Maťko

Chenevier

et al. 2007

Journal of Applied Physics

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“…This evolution model is consistent with the observed thermal evolution of varying defect structure with the temperature and the duration of annealing. 2,[15][16][17][18][19] …”

Section: Implications For Growthmentioning

confidence: 99%

“…Figure 1͑a͒ shows TEM images of rodlike defects 1 with ͕311͖ habit planes; also ͕111͖ rodlike defects exist. Figure 1͑b͒ shows Frank loops 2 -finite faulted ͕111͖ planes of interstitials. All have large aspect ratios from a few for Frank loops to hundreds for rodlike defects.…”

Section: Introductionmentioning

confidence: 99%

Relative stability of extended interstitial defects in silicon: First-principles calculations

Park

Wilkins

2009

Phys. Rev. B

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Interstitials stored in ͕311͖ or ͕111͖ habit planes form rows of interstitial chains elongated in ͗011͘ direction. Exploiting the large aspect ratio to treat chains as infinite, first-principles calculations of large computation supercells reveal a unique formation energy trend for each defect, which is closely correlated with its distinct shape. The most energetically favorable structure changes from ͕311͖ rodlike defects to Frank loops as the number of interstitials in the defect increases. These results are consistent with transmission electron microscopy studies.

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“…During implantation, single-crystalline Si turns amorphous when the accumulated damage (Si self-interstitials and vacancies) reaches a certain threshold concentration. The amorphous/crystalline (a/c) interface coincides with the depth where the damage crosses below that threshold [9]. Figure 2 illustrates the physical mechanism.…”

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confidence: 95%

Advanced CMOS devices: Challenges and implant solutions

Colombeau

Guo

Gossmann

et al. 2013

Physica Status Solidi (a)

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In this paper, we first review the trends for advanced CMOS devices in terms of architectures and scalability. The paper highlights the key process challenges for planar MOSFET and FinFET device technologies. We emphasize the need for advanced implant solutions to enable device scaling and performance as well as variability improvement. Especially, we discuss the latest damage engineering solutions as well as materials modification techniques (e.g., contact and strain engineering) to reduce leakage, improve drive current and process margin with reduced variability. Finally, we briefly discuss the implications and new challenges coming from novel channel material devices (e.g., silicon-germanium, germanium, and III-V).

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Thermal evolution of extended defects in implanted Si:

Cited by 67 publications

References 33 publications

Reduced boron diffusion under interstitial injection in fluorine implanted silicon

Reduced boron diffusion under interstitial injection in fluorine implanted silicon

Relative stability of extended interstitial defects in silicon: First-principles calculations

Advanced CMOS devices: Challenges and implant solutions

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