Thermal expansion of AlN, sapphire, and silicon

Yim, Woosoon; Paff, R. J.

doi:10.1063/1.1663432

Cited by 527 publications

(245 citation statements)

References 13 publications

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“…1. [9][10][11][12][13][14] Hence, as exhibited in Figs. 3 and 1, during the cooling process, tensile stress was generated in PZT films grown on Si substrate while films on sapphire and YSZ substrates showed the opposite phenomenon.…”

Section: Resultsmentioning

confidence: 63%

Stress-controlled Pb(Zr0.52Ti0.48)O3 thick films by thermal expansion mismatch between substrate and Pb(Zr0.52Ti0.48)O3 film

Han

Ryu

Yoon

et al. 2011

Journal of Applied Physics

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Polycrystalline Pb(Zr0.52Ti0.48)O3 (PZT) thick films (thickness ∼10 μm) were successfully fabricated by using a novel aerosol deposition technique on Si wafer, sapphire, and single crystal yitria stabilized zirconia (YSZ) wafer substrates with Pt electrodes and their dielectric, ferroelectric, and piezoelectric properties, and in-plane stresses were investigated. The films with different stress conditions were simply controlled by the coefficient of thermal expansion (CTE) misfit of PZT films and substrates. The results showed that the films bearing in-plane compressive stress deposited on the YSZ and sapphire substrates have superior dielectric, ferroelectric (∼90%), and piezoelectric (>200%) properties over that of the Si wafer. Among these three substrates, YSZ shows superior properties of the PZT films. However, films on Si wafer with tensile stress present lower properties. We believed that in-plane compressive stresses within the films are benefited, the formation of c-domain parallel to the thickness direction resulting in the higher piezoelectric properties. These results suggest that the properties of polycrystalline PZT thick films can be adjusted by simply choosing the substrates with different CTEs.

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Section: Resultsmentioning

confidence: 63%

Stress-controlled Pb(Zr0.52Ti0.48)O3 thick films by thermal expansion mismatch between substrate and Pb(Zr0.52Ti0.48)O3 film

Han

Ryu

Yoon

et al. 2011

Journal of Applied Physics

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“…The increase in the measured d 33 could be caused by the difference in thermal expansion coefficients between AlN and Si. At 100°C, the thermal expansion coefficients of Si and a-plane AlN are roughly 3.1×10 /K, respectively [4,5]. At high temperatures, the AlN film expands more than the Si substrate, decreasing the lattice mismatch allowing the AlN to behave more like an unclamped film.…”

Section: Discussionmentioning

confidence: 99%

High Temperature Annealing Studies on the Piezoelectric Properties of Thin Aluminum Nitride Films

et al. 2007

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A Rapid Thermal Annealing (RTA) system was used to anneal sputtered and MOVPEgrown Aluminum Nitride (AlN) thin films at temperatures up to 1000°C in ambient and controlled environments. According to Energy Dispersive X-Ray Analysis (EDAX), the films annealed in an ambient environment rapidly oxidize after five minutes at 1000°C. Below 1000°C the films oxidized linearly as a function of annealing temperature which is consistent with what has been reported in literature [1]. Laser Doppler Vibrometry (LDV) was used to measure the piezoelectric coefficient, d 33 , of these films. Films annealed in an ambient environment had a weak piezoelectric response indicating that oxidation on the surface of the film reduces the value of d 33 . A high temperature furnace has been built that is capable of taking in-situ measurements of the piezoelectric response of AlN films. In-situ d 33 measurements are recorded up to 300°C for both sputtered and MOVPE-grown AlN thin films. The measured piezoelectric response appears to increase with temperature up to 300°C possibly due to stress in the film.

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“…And high temperature X-ray diffraction measurement was performed by Rigaku Smartlab equipped with furnace (AntonPaar HTK1200) under vacuum, from 300 K to 500 K. In case of horizontal typed Bragg-Brentano geometry such as Smartlab diffractometer, since stage height is changing with increasing temperature, calibration parameters were determined based on measurement of NIST Standard Silicon. Lattice parameter of Si for each temperature was assumed by using quadratic formula of thermal expansion according to reference by Yim [10]. For both measurements X-ray generator was used by Cu-Kα radiation and applied 40 kV and 30 mA, and 2θ region covered from 10° to 90° by 0.02° steps.…”

Section: Experimental and Data Analysismentioning

confidence: 99%

Thermal Expansion Properties of Ag₂O Crystal Structure by Powder Neutron Diffraction

Ishikawa¹,

Danilkin²,

Avdeev³

et al. 2015

Proceedings of the 2nd International Symposium on Science at J-Parc — Unlocking the Mysteries of Life, Matter and the Universe

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Thermal expansion property of Silver(I)-Oxide (Ag 2 O) was structurally investigated by neutron powder diffraction from 3 K to 400 K, and measured by X-ray powder diffraction from 20 K to 498 K. Temperature dependency of lattice parameter by neutron diffraction indicates the negative thermal expansion (NTE) below room temperature, and it changes to positive thermal expansion (PTE) from 300 K to 400 K. And this result is consistent with X-ray diffraction and TMA measurement. Moreover, the result by X-ray diffraction shows that lattice parameter significantly decreases above 400 K. Since the result by TG measurement shows the mass loss remarkably in this temperature region, it is considered that decreasing lattice parameter above 400 K is caused from thermal decomposition.

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Thermal expansion of AlN, sapphire, and silicon

Cited by 527 publications

References 13 publications

Stress-controlled Pb(Zr0.52Ti0.48)O3 thick films by thermal expansion mismatch between substrate and Pb(Zr0.52Ti0.48)O3 film

Stress-controlled Pb(Zr0.52Ti0.48)O3 thick films by thermal expansion mismatch between substrate and Pb(Zr0.52Ti0.48)O3 film

High Temperature Annealing Studies on the Piezoelectric Properties of Thin Aluminum Nitride Films

Thermal Expansion Properties of Ag₂O Crystal Structure by Powder Neutron Diffraction

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Thermal expansion of AlN, sapphire, and silicon

Cited by 527 publications

References 13 publications

Stress-controlled Pb(Zr0.52Ti0.48)O3 thick films by thermal expansion mismatch between substrate and Pb(Zr0.52Ti0.48)O3 film

Stress-controlled Pb(Zr0.52Ti0.48)O3 thick films by thermal expansion mismatch between substrate and Pb(Zr0.52Ti0.48)O3 film

High Temperature Annealing Studies on the Piezoelectric Properties of Thin Aluminum Nitride Films

Thermal Expansion Properties of Ag2O Crystal Structure by Powder Neutron Diffraction

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Thermal Expansion Properties of Ag₂O Crystal Structure by Powder Neutron Diffraction