Thermal instability of electrically active centers in heavily Ga-doped ZnO thin films: X-ray absorption study of the Ga-site configuration

Abstract

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μ‐EXAFS, μ‐XRF, and μ‐PL Characterization of a Multi‐Quantum‐Well Electroabsorption Modulated Laser Realized via Selective Area Growth

“…These arguments explain why in the literature one can find several micrometer‐resolved X‐ray absorption near‐edge structure (μ‐XANES) results,44, 49, 50, 63, 66, 69, 70, 98 where only a few tens of electron‐volts are scanned across the edge, whereas papers reporting micrometer‐resolved extended XAFS (μ‐EXAFS) data, requiring an energy scan of several hundreds of eV, are much more rare 45, 46, 48, 55–60, 96, 99, 100. In the cited studies, an XRF micrometer‐resolved map evidenced the presence of domains in the samples, characterized by different chemical or phase natures, with a size in the 10–100 μm range.…”

“…Although focused on a very specific class of materials (SAG‐grown III–V heterostructures for optoelectronic devices37–42), the present contribution highlights the important improvements achieved in both beam focusing and beam stability that could be successfully applied in several frontier topics, in materials science, geology, archaeometry, environmental sciences, biology, neuroscience, and medicine. Without any presumption of exhaustivity, a small list of selected applications in different fields follows: •Materials science: Determination of doping profiles and doping local environments in semiconductor films;43–47 spatial determination of complex intermetallic phases in multicrystalline silicon doped with transition metals;48 study of composition and Cu oxidation‐state gradient in Bi 2 Sr 2 CaCu 2 O 8+ δ (Bi‐2212) superconducting whiskers;49, 50 spatial determination of residual strain gradients in composite materials51, 52 or in externally bent semiconductors;53 investigation of the local strain tensor of different heteroepitaxial layers with submicrometer resolution in oxide films grown on metal substrates 54 •Geology: Speciation of dilute contaminants in natural sediments55–60 and in fluid inclusions;61 selective detection of Fe and Mn species at mineral surfaces in weathered granite 62…”

“…•Materials science: Determination of doping profiles and doping local environments in semiconductor films;43–47 spatial determination of complex intermetallic phases in multicrystalline silicon doped with transition metals;48 study of composition and Cu oxidation‐state gradient in Bi 2 Sr 2 CaCu 2 O 8+ δ (Bi‐2212) superconducting whiskers;49, 50 spatial determination of residual strain gradients in composite materials51, 52 or in externally bent semiconductors;53 investigation of the local strain tensor of different heteroepitaxial layers with submicrometer resolution in oxide films grown on metal substrates 54…”

Interfacial Structure and Electrical Properties of Transparent Conducting ZnO Thin Films on Polymer Substrates

“…As the thermal stability test time increased, both the carrier concentration and the Hall mobility of the GZO thin films decreased regardless of the type of the plastic substrates. Because the thermal stability tests were performed in air, oxygen, and water vapor molecules can be adsorbed at the grain boundary of the GZO thin film Zhang & Brodie, 1994;Sans et al, 2007;Bayraktaroglu et al, 2008 Figure 4c.…”

Impurity distribution and microstructure of Ga-doped ZnO films grown by molecular beam epitaxy

“…[1][2][3][4][5] Low cost AZO is suitable for large-area applications such as displays and solar cells, while GZO is finding applications in solid-state optoelectronics due to higher performance. GZO has very low stress-strain constraints on doping compared to AZO and ITO, because the Ga-O bond length, 1.88 Å , is very close to the Zn-O bond length, 1.97 Å , 6 resulting in potentially higher mobility and carrier concentration. GZO and GaN both have wurtzite (WZ) crystal structure, with close in-plane lattice parameters (1.8% lattice mismatch).…”