Thermal management of coaxial through-silicon-via (C-TSV)-based three-dimensional integrated circuit (3D IC)

Abstract

Abstract:The analytical temperature model of coaxial through-silicon-via (C-TSV)-based three-dimensional integrated circuit (3D IC) is developed based on the Fourier' law of heat transfer and energy conservation, and is verified by employing ANSYS. Based on the theoretical model, several design guidelines are concluded. From the point of thermal management, 1) TSV should be inserted with high density; 2) Cu is a better material than Al and W; 3) the 3D IC layer should be as few as possible; 4) the silicon substrate thickness should be as thin as possible; 5) the temperature-sensitive modules should be placed near TSV and heat sink.

Analytical models of AC inductance and quality factor for TSV-based inductor

“…On-chip inductor is an important passive device in radiofrequency integrated circuits (RFICs) [1]. 3-D packaging technology using through-silicon vias (TSVs) initiates the realization of passive components including on-chip inductor, capacitor, filters, and so on [2][3][4][5][6][7][8][9][10][11][12][13][14][15][16][17][18][19]. Compared with a conventional 2-D inductor, a TSV-based 3-D inductor has advantages of high inductance density and less form factor [20][21][22][23][24].…”