Thermal management of optically pumped long-wavelength InP-based semiconductor disk lasers

Lindberg, Hans; Strassner, M.; Gerster, Eckart; Bengtsson, Jörgen; Larsson, Anders

doi:10.1109/jstqe.2005.853730

Cited by 49 publications

(17 citation statements)

References 27 publications

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“…[3][4][5][6][7][8][9]. Different thermal management techniques including thin device or heat spreader approaches have been a subject of thermal modelling [3][4][5][6][7].…”

Section: Introductionmentioning

confidence: 99%

“…Different thermal management techniques including thin device or heat spreader approaches have been a subject of thermal modelling [3][4][5][6][7]. Moreover, various factors which influence the temperature increase within laser vol− ume such as: pumping−beam properties (e. g., power [5,7], diameter [3,5,8], wavelength [5,6,8], spatial profile [5]), as well as thermal conductivity or thickness of heat spreader [3][4][5][6][7]9], window [5] and DBR mirror layers [7] have been investigated. In this paper the complex comparative analysis of different VECSEL configurations (e.g., as−grown, thin device, heat spreader approaches) has been presented in form of so−called 'thermal maps' which enable determining the maximum temperature at specified pumping conditions in a quick and simple way, so they can be very useful, espe− cially at VECSEL designing.…”

Section: Introductionmentioning

confidence: 99%

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Thermal management of GaInNAs/GaAs VECSELs

Sokół

Sarzała

2013

Opto-Electronics Review

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Different methods used to reduce temperature increase within the active region of vertical-external-cavity surface-emitting lasers (VECSELs) are described and compared with the aid of the self-consistent thermal finite-element method. Simulations have been carried out for the GaInNAs/GaAs multiple-quantum-well (MQW) VECSEL operating at room temperature at 1.31 μm. Main results are presented in form of ‘thermal maps’ which can be simply used to determine maximal temperature of different structures at specified pumping conditions. It has been found that these maps are also appropriate for some other GaAs-based VECSELs and can be very helpful especially during structure designing. Moreover, convective and thermal radiation heat transfer from laser walls has been investigated.

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“…[3][4][5][6][7][8][9]. Different thermal management techniques including thin device or heat spreader approaches have been a subject of thermal modelling [3][4][5][6][7].…”

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Thermal management of GaInNAs/GaAs VECSELs

Sokół

Sarzała

2013

Opto-Electronics Review

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“…This is particularly true for InP-and GaSb-based VECSELs. A more detailed view of the heat flow in VECSEL assemblies can be found in [53][54][55][56][57], which provide finite element simulations for various configurations and VECSEL structures.…”

Section: Thermal Managementmentioning

confidence: 99%

Optically pumped VECSELs: review of technology and progress

Guina

Rantamäki

Härkönen

2017

J. Phys. D: Appl. Phys.

205

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“…This is particularly true for InP-and GaSb-based SDLs. The thermal issues of SDLs have been discussed in detail in a number of papers reporting simulations and experimental results on the subject [21,[31][32][33][34].…”

Section: Thermal Management Of Sdlsmentioning

confidence: 99%

Semiconductor Disk Lasers: Recent Advances in Generation of Yellow-Orange and Mid-IR Radiation

Guina

Härkönen

Korpijärvi

et al. 2012

Advances in Optical Technologies

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We review the recent advances in the development of semiconductor disk lasers (SDLs) producing yellow-orange and mid-IR radiation. In particular, we focus on presenting the fabrication challenges and characteristics of high-power GaInNAs-and GaSbbased gain mirrors. These two material systems have recently sparked a new wave of interest in developing SDLs for high-impact applications in medicine, spectroscopy, or astronomy. The dilute nitride (GaInNAs) gain mirrors enable emission of more than 11 W of output power at a wavelength range of 1180-1200 nm and subsequent intracavity frequency doubling to generate yelloworange radiation with power exceeding 7 W. The GaSb gain mirrors have been used to leverage the advantages offered by SDLs to the 2-3 μm wavelength range. Most recently, GaSb-based SDLs incorporating semiconductor saturable absorber mirrors were used to generate optical pulses as short as 384 fs at 2 μm, the shortest pulses obtained from a semiconductor laser at this wavelength range.

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Thermal management of optically pumped long-wavelength InP-based semiconductor disk lasers

Cited by 49 publications

References 27 publications

Thermal management of GaInNAs/GaAs VECSELs

Thermal management of GaInNAs/GaAs VECSELs

Optically pumped VECSELs: review of technology and progress

Semiconductor Disk Lasers: Recent Advances in Generation of Yellow-Orange and Mid-IR Radiation

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