Thermal mapping of defects in AlGaN∕GaN heterostructure field-effect transistors using micro-Raman spectroscopy

Pomeroy, James W.; Kuball, Martin; Wallis, D. J.; Keir, A M; Hilton, K.P.; Balmer, R.S.; Uren, Michael J.; Martin, Trevor; Heard, Peter J

doi:10.1063/1.2041823

Cited by 34 publications

(14 citation statements)

References 8 publications

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“…By the scanning focused laser spot over the DUT, temperature maps can be obtained by measuring each point sequentially. For example, the channel temperature line profile in a HEMT can be measured by scanning laterally in one dimension (Figure 1), whereas by scanning in two dimensions (2D) surface temperature maps can be obtained which may be used to probe the temperature distribution around defects or other features [39]. As with any measurement technique, it is important to take into account spatial averaging when analyzing temperatures measured by Raman thermography, which is determined by the optical resolution of the measurement system.…”

Section: A Spatial Resolutionmentioning

confidence: 99%

A Review of Raman Thermography for Electronic and Opto-Electronic Device Measurement With Submicron Spatial and Nanosecond Temporal Resolution

Kuball

Pomeroy

2016

IEEE Trans. Device Mater. Relib.

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This is the author accepted manuscript (AAM). The final published version (version of record) is available online via IEEE at http://ieeexplore.ieee.org/document/7590091. Please refer to any applicable terms of use of the publisher. University of Bristol -Explore Bristol Research General rightsThis document is made available in accordance with publisher policies. Please cite only the published version using the reference above. Full terms of use are available: http://www.bristol.ac.uk/pure/about/ebr-termsAbstract-We review the Raman thermography technique, which has been developed to determine the temperature in and around the active area of semiconductor devices with submicron spatial and nanosecond temporal resolution. This is critical for the qualification of device technology, including for accelerated lifetime reliability testing and device design optimization. Its practical use is illustrated for GaN and GaAs based high electron mobility transistors, and opto-electronic devices. We also discuss how Raman thermography is used to validate device thermal models, as well as determining the thermal conductivity of materials relevant for electronic and opto-electronic devices.

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Section: A Spatial Resolutionmentioning

confidence: 99%

A Review of Raman Thermography for Electronic and Opto-Electronic Device Measurement With Submicron Spatial and Nanosecond Temporal Resolution

Kuball

Pomeroy

2016

IEEE Trans. Device Mater. Relib.

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“…A number of simulation input parameters must be accurately known to determine the TBR. The SiC substrate thermal conductivity is the dominant parameter for the device temperature [17]. As the temperature of the SiC as a function of depth ( Fig.…”

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confidence: 99%

Reducing Thermal Resistance of AlGaN/GaN Electronic Devices Using Novel Nucleation Layers

Riedel

Pomeroy

Hilton

et al. 2009

IEEE Electron Device Lett.

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Currently, up to 50% of the channel temperature in AlGaN/GaN electronic devices is due to the thermal-boundary resistance (TBR) associated with the nucleation layer (NL) needed between GaN and SiC substrates for high-quality heteroepitaxy. Using 3-D time-resolved Raman thermography, it is shown that modifying the NL used for GaN on SiC epitaxy from the metalorganic chemical vapor deposition (MOCVD)-grown standard AlN-NL to a hot-wall MOCVD-grown AlN-NL reduces NL TBR by 25%, resulting in ∼10% reduction of the operating temperature of AlGaN/GaN HEMTs. Considering the exponential relationship between device lifetime and temperature, lower TBR NLs open new opportunities for improving the reliability of AlGaN/ GaN devices.

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“…The lattice temperature evolution of the AlGaN/GaN structure on Al 2 O 3 substrate versus applied power is deduced from Micro-Raman spectroscopy measurement. The microRaman spectroscopy is a suitable technique to measure AlGaN/GaN HFET device temperature with sub-micron spatial resolution [7] [8]. Micro-Raman measurements is carried out using a spectrometer XY DILOR and a 100X objective giving a typically 0.7-1 µm diameter spot on the sample surface.…”

Section: Resultsmentioning

confidence: 99%

Thermal behaviour of gate-less AlGaN/GaN heterostructures

Benbakhti

Rousseau

Soltani

et al. 2007

2007 European Microwave Integrated Circuit Conference

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For power applications, the dissipated power in GaN based devices becomes very significant and consequently can generate a very important self-heating effect in the component. The self-heating in the device increases considerably the lattice or the operating temperature and the transport properties are then degraded. To explain and to understand the physical phenomena observed in experiment for power components, it requires to introduce heating effects.The goal of this study is to estimate self-heating effects on the static characteristics of TLM (Transmission Line Model) AlGaN/GaN structures. For this objective, a developed physical thermal model is used in order to study the electrical and thermal phenomena in a coupled way. These studies are validated by electrical measurements regarding I-V characteristics and also by optic measurements using micro-Raman spectroscopy.

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Thermal mapping of defects in AlGaN∕GaN heterostructure field-effect transistors using micro-Raman spectroscopy

Cited by 34 publications

References 8 publications

A Review of Raman Thermography for Electronic and Opto-Electronic Device Measurement With Submicron Spatial and Nanosecond Temporal Resolution

A Review of Raman Thermography for Electronic and Opto-Electronic Device Measurement With Submicron Spatial and Nanosecond Temporal Resolution

Reducing Thermal Resistance of AlGaN/GaN Electronic Devices Using Novel Nucleation Layers

Thermal behaviour of gate-less AlGaN/GaN heterostructures

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