Thermal Maps of GaAs P-HEMT: A Novel System Based on the Photocurrent Spectral Analysis

Reale, Andrea; Carlo, Aldo Di; Peroni, M.; Lanzieri, C.; Lavagna, S.

doi:10.1109/ted.2007.891868

Cited by 6 publications

(1 citation statement)

References 12 publications

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“…Ideally, the detailed temperature distribution inside the device volume yields a complete picture of the thermal behavior. Under this respect, numerical simulation is able to resolve temperature variations at a submicron scale, and can therefore perform better than most experimental techniques, which are typically limited in spatial resolution and, often, to the surface of the active device [7], [8]. However, an exact device-level thermal model calls for the solution of the heat equation over the device volume in the presence of a self-consistent dissipated power distribution, which in turn has to be identified from the solution of a physics-based transport model, like for instance the drift-diffusion or hydrodynamic (see, e.g., [9]).…”

Section: Heat Equation and Temperature Distributionmentioning

confidence: 99%

When self-consistency makes a difference

et al. 2008

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T hermal management of semiconductor devices and integrated circuits [from digital to analog and power radio frequency (RF) and microwave circuits] is a wellknown critical issue in modern electronic design. Technology advances, such as device downscaling to increase the maximum operating frequency and the use of wide-bandgap semiconductors [such as silicon carbide and (SiC) and gallium nitride (GaN)] with breakdown voltages one order of magnitude larger than in conventional III-V compounds, have significantly increased power densities in compound semiconductor microwave and mmwave transistors, thus making effective thermal design a key point for successful technology development. Heating is an issue also in Si-based RF technologies, as in lateral double diffused metal oxide semiconductor (LDMOS) devices; however, despite the impressive total RF power such devices exhibit, the power density is in fact much lower, of the order of 1 W/mm against 10 W/mm or more in GaN high electron mobility transistor HEMTs; gallium arsenide GaAs FETs have similar or somewhat larger power densities than LDMOS, but with poorer substrate thermal conductivity. Self-heating not only is a major limitation to the device reliability (through thermal instabilities, hot spot formation, and thermal runaway), but also affects [sometimes in a subtle way, e.g., when long-term thermal memory affects the device linearity (see the "Dynamic Thermal Modeling" section)] the device performance. In many applications, a critical role is also played by the transient thermal response. Examples are pulsed-mode high-power amplifiers (HPAs) (RF and microwave). RF power circuit design

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Section: Heat Equation and Temperature Distributionmentioning

confidence: 99%