Thermal modeling of integrated power electronic modules by a lumped-parameter circuit approach

Raciti, A.; Cristaldi, Davide

doi:10.1109/aeit.2013.6666802

Cited by 8 publications

(5 citation statements)

References 4 publications

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“…Then the compact RC network model consisting of 115 R and C parameters to predict the transient junction temperatures of the 6 MOSFETS has further been developed, where cross-heating effects between the MOSFETs are represented with lateral thermal resistors. Such a compact RC network model represents the real structure and heat-flow paths within the module much better than those RC network models reported in the existing literature [15][16][17][18][19][20][21], but there is no existing method to effectively determine the R and C parameters.…”

Section: Introductionmentioning

confidence: 97%

“…5 very well, and the R and C parameters extracted using the three-step curve fitting method are listed in Table III. Here the unit for the R parameters is C/W, and the unit for the C parameters is J/C.The extracted R and C parameters can indeed reflect the physical structure of the SiC power module which cannot be revealed using an m×m Foster network similar to the previous RC network models [15][16][17][18]21]. For example, the values of C17, C18, C67 and C68 are higher than the values of CI7 and CI8 (I=2, 3, 4 and 5), and the values of R17, R18, R67 and R68 are higher than the values of RI7 and RI8 (I=2, 3, 4 and 5).…”

Section: B R and C Parameters Of The Rc Network Modelmentioning

confidence: 99%

“…Compact thermal models expressed as thermal resistorcapacitor (RC) networks were more widely employed to rapidly predict junction temperatures or the temperatures at a few critical locations in the power modules for electro-thermal design, thermal management, reliability and lifetime prediction [15][16][17][18][19][20][21][22][23][24]. In the simplified cases, individual power device might be considered and one dimensional heat conduction was assumed to predict the junction temperatures [23][24][25].…”

Section: Introductionmentioning

confidence: 99%

“…Generally speaking, the Foster networks were used as behavior models to calculate the transient junction temperatures, while the R and C parameters in the Cauer networks were taken to have true physical meanings. In most cases, multiple power devices with both self-heating and crossheating effects were considered [15][16][17][18][19][20][21]. In these models, no matter whether it is self-heating or cross-heating, the heating contribution from each power device was described using a Foster network.…”

Section: Introductionmentioning

confidence: 99%

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A Physical RC Network Model for Electrothermal Analysis of a Multichip SiC Power Module

Castellazzi

Eleffendi

et al. 2018

IEEE Trans. Power Electron.

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AbstractThis paper is concerned with the thermal models which can physically reflect the heat-flow paths in a lightweight three-phase half bridge, two-level SiC power module with 6 MOSFETs and can be used for coupled electro-thermal simulation. The finite element (FE) model was first evaluated and calibrated to provide the raw data for establishing the physical RC network model. It was experimentally verified that the cooling condition of the module mounted on a water cooler can be satisfactorily described by assuming the water cooler as a heat exchange boundary in the FE model. The compact RC network consisting of 115 R and C parameters to predict the transient junction temperatures of the 6 MOSFETS was constructed, where cross-heating effects between the MOSFETs are represented with lateral thermal resistors. A three-step curve fitting method was especially developed to overcome the challenge for extracting the R and C values of the RC network from the selected FE simulation results. The established compact RC network model can physically be correlated with the structure and heat-flow paths in the power module, and was evaluated using the FE simulation results from the power module under realistic switching conditions. It was also integrated into the LTspice model to perform the coupled electrothermal simulation to predict the power losses and junction temperatures of the 6 MOSFETs under switching frequencies from 5 kHz to 100 kHz which demonstrate the good electrothermal performance of the designed power module.Index TermsMOSFETs, SiC power module, finite element methods, RC network, curve fitting, three-phase inverters.

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Section: Introductionmentioning

confidence: 97%

Section: B R and C Parameters Of The Rc Network Modelmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

A Physical RC Network Model for Electrothermal Analysis of a Multichip SiC Power Module

Castellazzi

Eleffendi

et al. 2018

IEEE Trans. Power Electron.

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“…Finite element analysis (FEA) [27][28][29] provides detailed information about the thermal impedances between a heat source and a heat sink in an IGBT module. These models are usually based on ideal material properties and are very complex to implement.…”

Section: Introductionmentioning

confidence: 99%

Least Squares Method for Identification of IGBT Thermal Impedance Networks Using Direct Temperature Measurements

et al. 2020

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State-of-the-art methods for determining thermal impedance networks for IGBT (Insulated Gate Bipolar Transistor) modules usually involves the establishment of the relationship between the measured transistor or diode voltage and temperature under homogenous temperature distribution across the IGBT module. The junction temperature is recomputed from the established voltage–temperature relationship and used in determining the thermal impedance network. This method requires accurate measurement of voltage drop across the transistors and diodes under specific designed heating and cooling profiles. Validation of the junction temperature is usually done using infrared camera or sensors placed close to the transistors or diodes (in some cases and open IGBT module) so that the measured temperature is as close to the junction as possible. In this paper, we propose an alternative method for determining the IGBT thermal impedance network using the principles of least squares. This method uses measured temperatures for defined heating and cooling cycles under different cooling conditions to determine the thermal impedance network. The results from the proposed method are compared with those obtained using state-of-the-art methods.

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Discrete Power Devices and Power Modules

Chvála

Cristaldi

Donoval

et al. 2016

Smart Systems Integration and Simulation

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Thermal modeling of integrated power electronic modules by a lumped-parameter circuit approach

Cited by 8 publications

References 4 publications

A Physical RC Network Model for Electrothermal Analysis of a Multichip SiC Power Module

A Physical RC Network Model for Electrothermal Analysis of a Multichip SiC Power Module

Least Squares Method for Identification of IGBT Thermal Impedance Networks Using Direct Temperature Measurements

Discrete Power Devices and Power Modules

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