Thermal Oxidation Kinetics of Silicon in Pyrogenic  H 2 O  and 5% HCl /  H 2 O  Mixtures

Deal, B. E.

doi:10.1149/1.2131502

Cited by 91 publications

(43 citation statements)

References 16 publications

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“…Since a high oxidation rate arises from a high concentration of the reaction sites, the initial rate of thermal oxidation of crystalline Si is directly proportional to atom density of the crystal planes. 15 However, there are considerable differences in the results of GaAs oxidation by the LPCEO technique. The results indicate that the slope of the straight line for the ͑110͒-oriented GaAs is more negative than those of ͑111͒ and ͑100͒ oriented.…”

Section: The Arrhenius Equation Ismentioning

confidence: 99%

Effect of crystal orientation and doping on the activation energy for GaAs oxide growth by liquid phase method

Wang

Chou

et al. 2000

Journal of Applied Physics

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We have investigated the oxide growth kinetics of near-room-temperature liquid phase chemical enhanced oxidation on differently oriented and doped GaAs substrates. Oxidation reactions have been studied by analyzing their activation energies and have been found to depend on the bond configuration of crystal planes. Experimental results indicate that the activation energies are independent of the doping of GaAs. The oxidation rates are dopant selective (n−:p+-GaAs∼4:1 at 30 °C under illumination) and sensitive to illumination (without:with illumination∼1:25 at 30 °C for a n+-doped GaAs). In the oxidation reactions, photogenerated holes are found to play an important role. Finally, we have proposed a mechanism based on the band bending and the carrier transport near the oxide-GaAs interface to interpret the experimental observations.

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Section: The Arrhenius Equation Ismentioning

confidence: 99%

Effect of crystal orientation and doping on the activation energy for GaAs oxide growth by liquid phase method

Wang

Chou

et al. 2000

Journal of Applied Physics

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“…Equation (10) where T is in ~ Equations (3-5), (7)(8)(9), (11)(12)(13) were directly implemented into the SUPREM 11 program (Subroutine OXDEP) to account for the effect of chlorine in the dry 02 oxidizing gas.…”

Section: Oxidation In Hcl/o 2 Mixturesmentioning

confidence: 99%

Phenomenological Model for Silicon Oxidation in Dry Oxygen in the Presence of HCl

Ellis

Gardiner

Cyr

1983

J. Electrochem. Soc.

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“…The oxidation of the surface appears to increase the roughness during the crystallization. 9 Note that there is no oxidation during the crystallization when the cap layer is used. Figure 4 shows the EBSD color coordinate ͑a͒ and the crystalline orientation mapping images for the surface normal direction to the poly-Si films crystallized with a SiN x cap layer using Ni-ferritin molecules ͑b͒ and its inverse pole figure ͑c͒.…”

Section: Methodsmentioning

confidence: 99%

A Method of Forming a Polycrystalline Si with the Biomolecule Ferritin

Kim

Kang

et al. 2006

Electrochem. Solid-State Lett.

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We studied the metal-induced crystallization of a-Si using a Ni-ferritin molecule of 7 nm diameter. The Ni-ferritin molecules were coated onto the SiN x /amorphous silicon ͑a-Si͒/buffer/glass and it was heated at 580°C for 20 h for crystallization after UV burning of the biomaterial. It was found that the grain size of poly-Si increases with decreasing the ferritin density. A grain size of ϳ220 m was achieved, and its surface roughness was 2.1 nm.Polycrystalline-Si ͑poly-Si͒ thin-film transistors ͑TFTs͒ on glass is of increasing interest for applications to high-resolution liquidcrystal displays, active-matrix organic light-emitting diodes ͑AMOLEDs͒, and system on glass ͑SOG͒ because of its high fieldeffect mobility. Common methods for crystallizing amorphous silicon ͑a-Si͒ are solid phase crystallization ͑SPC͒, excimer laser annealing ͑ELA͒, and metal-induced crystallization ͑MIC͒. 1 Of the various approaches available, Ni-mediated crystallization of amorphous silicon is one of promising techniques for large-scale manufacturing of high-performance poly-Si TFTs with low cost. This is based on the fact that NiSi 2 crystallites have the same lattice structure with Si with a very small mismatch of 0.4%. Then, the NiSi 2 crystallites which can be formed at 400°C are seeds for crystallization of a-Si. The a-Si is crystallized as a result of migration of the seeds throughout the a-Si network. 2 To improve the quality of the poly-Si, several approaches have been conducted on the crystallization of a-Si, including a capping layer on it. For example, to control the lateral growth of ELA poly-Si through lateral thermal gradients, three different patterned capping layers have been used: antireflective ͑SiO 2 ͒, heat-sink ͑SiN x ͒, and reflective ͑metal͒ capping layers. 3 We introduced a cap layer on the a-Si to reduce metal contamination and to have a clean and smooth surface. 4,5 Recently, Kirimura et al. demonstrated the biotechnology to obtain MIC poly-Si thin-films using ferritin with a Ni core ͑7 nm͒. 6 They achieved the grain size of ϳ3 m prepared by Ni-mediated crystallization with ferritin molecules.In this work, we studied the crystallization of a-Si using Niferritin molecules on silicon nitride ͑SiN x ͒ cap layers to reduce protein contamination and to obtain large-grain poly-Si thin-films. The Ni on the cap layer diffuses through the cap and forms the seeds in a-Si for crystallization. Disk-shaped grains of 220 m were achieved, which was confirmed by optical microscopy and by electron backscattered diffraction ͑EBSD͒.

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Thermal Oxidation Kinetics of Silicon in Pyrogenic H 2 O and 5% HCl / H 2 O Mixtures

Cited by 91 publications

References 16 publications

Effect of crystal orientation and doping on the activation energy for GaAs oxide growth by liquid phase method

Effect of crystal orientation and doping on the activation energy for GaAs oxide growth by liquid phase method

Phenomenological Model for Silicon Oxidation in Dry Oxygen in the Presence of HCl

A Method of Forming a Polycrystalline Si with the Biomolecule Ferritin

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