Thermal oxidation of copper over a broad temperature range: towards the formation of cupric oxide (CuO)

Comparative Study of Photocarrier Dynamics in CVD-deposited CuWO4, CuO, and WO3 Thin Films for Photoelectrocatalysis

“…The TRMC signal drops by about 80% of its initial value within less than 50 ns crossing over into a small longer-lived tail that decays on the µs scale. Reported mobility values of CuO depend very much on the preparation parameters and the diverse measurement techniques and range between 10 −4 and 10 2 cm 2 V −1 s −1 [29][30][31][32][33][34][35]. For instance, Hall mobilities of CuO films are usually higher than field effect mobility obtained from thin-film transistors (TFT) measurements.…”

Single wall carbon nanotube based optical rectenna

“…Oxidation at temperatures lower than 400 °C leads to the growth of a thin copper oxide layer (CuO) over the Cu surface. 35 For our device, a thin layer of copper oxide of 3.69 nm, measured by spectroscopic ellipsometry, is formed by thermal oxidation of Cu by heating at 150 °C for 1 h prior to the deposition of CNT, as shown Fig. 1c .…”

A Study of the Morphological Changes and the Growth Kinetics of the Oxides Formed by the High Temperature Oxidation of Cu-32.02% Zn-2.30% Pb Brass

“…For instance, the effect of temperature on the morphology of the oxides formed through the thermal oxidation of some copper alloy has been elucidated in some recent publications 12,13 . Furthermore, the variation of the temperature of oxidation of copper [Cu(100)] thin films have shown same effects on the different morphological forms of the copper (I) oxide (Cu 2 O) formed; which included pyramids, nanorods, domes or terraced layered oxide structures.…”