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Orthorhombic tin sulfide (SnS) thin films have been deposited on stainless steel (SS) substrates by Chemical Bath Deposition (CBD) at 25, 35 and 70 °C with a deposit time of 8 hours each one. XRD analysis showed that samples obtained at 25 °C and 70 °C present very small diffraction peaks. This can be attributed in the case of the sample obtained at 25 degrees, that the crystallization process is not completed because the temperature is so low and in case of the sample deposited at 75 degrees, a redissolution of the material is carried out. However, sample obtained at 35 °C was polycrystalline with orthorhombic structure and preference plane (111). All samples showed the Raman vibrational modes TO and LO of the SnS and confirms that the samples do not have by-products. It was observed from SEM micrographs that the films consisted of spheres for the sample deposited at 25 °Candsmall flakes for the other samples. From diffuse reflectance measurements the optical band gap calculated was between 1.45 eV to 1.59 eV.

The effect of the gaseous atmosphere in the growth of gallium arsenide (GaAs) films was studied. The films have been grown by close-spaced vapor transport (CSVT) technique in a home-made hot filament chemical vapor deposition (HFCVD) reactor using molecular hydrogen and molecular nitrogen as the transport agent. An important point about the gaseous atmosphere is the ease in creating volatile compounds when it makes contact with the GaAs source, this favors the transport of material in a CSVT system. Chemical reactions are proposed in order to understand the significant difference produced from the gaseous atmosphere. The films grown with hydrogen are (almost) continuous and have homogeneous layers with preferential orientation (111). The films grown with nitrogen are granular and rough layers with the coexistence of the orientations (111), (220) and (311) in the crystals. The incorporation of impurities in the films was corroborated by energy dispersive spectroscopy (EDS) showing traces of oxygen and nitrogen for the case of the samples obtained with nitrogen. Films grown in a hydrogen atmosphere show a higher band gap than those grown in a nitrogen atmosphere. With the results of XRD and micro-Raman we observe a displacement and broadening of the peaks, characteristic of a structural disorder. The calculations of the FWHM allow us to observe the crystallinity degree and determine an approximate crystallite size using the Scherrer's equation.

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