Thermal Oxidation of Heavily Phosphorus‐Doped Thin Films of Polycrystalline Silicon

Saraswat, Krishna C.; Singh, Harinder

doi:10.1149/1.2123503

Cited by 34 publications

(14 citation statements)

References 18 publications

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“…Phosphorus segregates at the Si (SiC) side of the Si/SiO 2 (SiC/SiO 2 ) interface during oxidation of P‐doped Si and SiC, 68,69 and can therefore affect the interface reaction rate. However, implanted P does not reduce (and in concentrations greater than ∼10 19 cm −3 even increases) the oxidation rate of either Si 70–74 or SiC, 75,76 which is consistent with our observations that monazite does not affect the oxidation rate of pure SiC.…”

Section: Discussionsupporting

confidence: 92%

Monazite Coatings on SiC Fibers II: Oxidation Protection

Mogilevsky¹,

Boakye²,

Hay³

et al. 2006

Journal of the American Ceramic Society

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The effect of monazite on the oxidation of SiC was studied in laboratory and dry air. Monazite inhibited the oxidation of Tyranno‐SA™, Tyranno‐ZX™, Sylramic, and Hi‐Nicalon SiC fibers. Oxidation of pure chemical vapor deposition SiC and undoped SiC single crystals was not inhibited by monazite. Dry oxidation of both uncoated and monazite‐coated Tyranno‐SA™ fibers initially displayed parabolic kinetics with an activation energy of 180–190 kJ/mol. Subsequently, the oxidation rate of monazite‐coated fibers increased and the oxide‐scale growth rate approached that of the uncoated fibers. No differences in the composition or structure of the silica oxidation product could be detected between uncoated and coated fibers using transmission electron microscopy and energy‐dispersive spectroscopy. Possible mechanisms of the inhibition of SiC oxidation by monazite are discussed.

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Section: Discussionsupporting

confidence: 92%

Monazite Coatings on SiC Fibers II: Oxidation Protection

Mogilevsky¹,

Boakye²,

Hay³

et al. 2006

Journal of the American Ceramic Society

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“…A larger doping concentration can increase the oxidation rate up to an order of magnitude. 24,25 In our oxidized nanowires, polysilicon is consumed three times faster along the height of the nanowire than along the width. In annealed/oxidized polysilicon, additional dopants segregate at the grain boundaries and at the interfaces.…”

Section: ϫ3mentioning

confidence: 96%

Electrical and structural properties of solid phase crystallized polycrystalline silicon and their correlation to single-electron effects

Tan

Durrani

Ahmed

2001

Journal of Applied Physics

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Single-electron transistors have been fabricated in solid phase crystallized polycrystalline silicon films deposited on SiO 2 layers grown on silicon substrates. The single-electron transistors consist of lateral side-gated nanowires. A Coulomb staircase is observed at 4.2 K, which is fully modulated by the side-gate voltage. Two-period conductance oscillations are observed in nanowires fabricated on 10-nm-thick buried oxide layers, while single-period oscillations are observed in nanowires fabricated on 40-nm-thick buried oxide layers. The two-period oscillations are attributed to the formation of a charge layer in the silicon substrate. The single-electron effects are also studied as a function of the nanowire dimensions and annealing or oxidation treatments. The effects are correlated to the structure of the polysilicon film, characterized using transmission electron microscopy, Raman spectroscopy, and electron spin resonance analysis. These measurements demonstrate the significance of single-electron charging effects on electron transport in nanometer-scale complementary metal-oxide semiconductor systems.

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“…Following the removal of the photoresist, another 100-nm layer of LPCVD silicon nitride is deposited to passivate the polysilicon resistor. This film prevents resistance from longterm drifting due to spontaneous oxidation of the polysilicon resistor in air [24]. Contact holes are patterned and etched in plasma to allow for access to the polysilicon resistor through the last silicon nitride layer.…”

Section: Sensor Fabricationmentioning

confidence: 99%

A micromachined flow shear-stress sensor based on thermal transfer principles

Liu

Huang

Zhu

et al. 1999

J. Microelectromech. Syst.

148

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Microhot-film shear-stress sensors have been developed by using surface micromachining techniques. The sensor consists of a suspended silicon-nitride diaphragm located on top of a vacuum-sealed cavity. A heating and heat-sensing element, made of polycrystalline silicon material, resides on top of the diaphragm. The underlying vacuum cavity greatly reduces conductive heat loss to the substrate and therefore increases the sensitivity of the sensor. Testing of the sensor has been conducted in a wind tunnel under three operation modes-constant current, constant voltage, and constant temperature. Under the constanttemperature mode, a typical shear-stress sensor exhibits a time constant of 72 s. [362]

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Thermal Oxidation of Heavily Phosphorus‐Doped Thin Films of Polycrystalline Silicon

Cited by 34 publications

References 18 publications

Monazite Coatings on SiC Fibers II: Oxidation Protection

Monazite Coatings on SiC Fibers II: Oxidation Protection

Electrical and structural properties of solid phase crystallized polycrystalline silicon and their correlation to single-electron effects

A micromachined flow shear-stress sensor based on thermal transfer principles

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