Thermal oxidation of n-type ZnN films made by -sputtering from a zinc nitride target, and their conversion into p-type films

Structural, optical and electrical properties of N-doped ZnO thin films prepared by thermal oxidation of pulsed filtered cathodic vacuum arc deposited ZnxNy films

“…5. The transmittance of the as-deposited Zn x N y was very low due to excess of Zn in the structure of the film [31]. After oxidation, all the samples became more transparent and their transmittance in the visible range was above 85%.…”

Structural and optical properties of zinc nitride films prepared by rf magnetron sputtering

“…However, it is still difficult to obtain reproducible and reliable p-type ZnO due to its intrinsic defects [10]. Recently, zinc nitride is studied as a promising material [11], and it can be transformed into p-type ZnO [12][13].…”

Investigation of As-doped ZnO films synthesized via thermal annealing of ZnSe/GaAs heterostructures

“…Next, they were oxidized in a horizontal tube furnace by annealing in an oxygen flow for 2 h at 500 1C. Our annealing time exceeds rapid annealing used for ZnTe films (1-25 min) [35,36] and is comparable to the long annealing (1-5 h) applied toward ZnS [44,45] and Zn x N y [46][47][48] films to assure full transformation of ZnSe into the ZnO. Thickness of ZnSe films was varied between 300 nm and 1 mm.…”