Thermal phenomena in acrylic 193-nm resists

Paniez, Patrick Jean; Gally, Severine; Mortini, Bénédicte; Rosilio, C.; Sassoulas, Pierre-Olivier; Dammel, Ralph R.; Padmanaban, Munirathna; Klauck-Jacobs, Axel; Oberlander, Joseph E.

doi:10.1117/12.350189

Cited by 4 publications

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“…For instance the deprotection reaction in PHS is autocatalytic, while methacrylate-based resists generally do not exhibit this characteristic. 49 On the basis of the initial qualitative interpretation of the reaction diffusion front for PMAdMA, it appears as though the detailed model proposed by Houle and co-workers for PHS 25 also applies to PMAdMA. However, it is unclear if there is a specific binding between the photoacid and the MAA, or there is simply reduced diffusivity in the vicinity of MAA-rich regions.…”

Section: Discussionmentioning

confidence: 99%

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Measurements of the Reaction−Diffusion Front of Model Chemically Amplified Photoresists with Varying Photoacid Size

et al. 2006

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Neutron reflectivity and Fourier transform infrared spectroscopy measurements are used to profile the deprotection reaction-diffusion front with nanometer resolution in a model photoresist polymer using three perfluoroalkane-based photoacid generators (PAG) with varying chain lengths. As expected, the spatial extent of the deprotection reaction front increases with decreasing PAG size. Although the total extent of deprotection increases with increasing postexposure bake time for each PAG, the reaction-diffusion of deprotection does not propagate continuously into the photoresist polymer. The form of the deprotection reaction front changes because the diffusion process is affected by the changing polymer composition. The data are well described by a reactiondiffusion model that includes a simple acid-trapping term and does not require a varying PAG diffusivity. This high-resolution profiling, together with modeling, illustrates details of the coupled diffusion and deprotection reaction processes that affect lithographic performance.

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Section: Discussionmentioning

confidence: 99%

“…The switch from hydroxystryrene to methacrylate-based polymers does introduce specific effects on the fundamentals of dissolution , and reaction. For instance the deprotection reaction in PHS is autocatalytic, while methacrylate-based resists generally do not exhibit this characteristic …”

Section: Discussionmentioning

confidence: 99%

Measurements of the Reaction−Diffusion Front of Model Chemically Amplified Photoresists with Varying Photoacid Size

et al. 2006

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“…As the reaction proceeds, protected groups are cleaved leading to a methacrylic acid (MAA) product as governed by the chemical equation (2). An auto-acceleration effect by reaction products, reported for a hydroxystyrene system 19 was not observed in these experiments, nor from results from Paniez et al 20 , which uses a similar methacrylate system. …”

Section: Acid Catalyzed Reaction Modelmentioning

confidence: 86%

Copolymer fraction effect on acid catalyzed deprotection reaction kinetics in model 193 nm photoresists

et al. 2006

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A correlation between polymer molecular structure and acid catalyzed reaction kinetics is demonstrated by a photoresist copolymer with an acid-labile and a non-reactive monomer. The acid catalyzed deprotection kinetics depend significantly on the composition of the non-reactive comonomer in the polymer chain. The apparent reaction rate constant decreases monotonically with increasing non-reactive comonomer composition. The phenomena are interpreted as the reduction of diffusivity of photoacid in the polymer matrix from a hydrogenbonding interaction with the polar group in the inert comonomer. In addition, hydrogen-bonding interactions between the photoacid and the reaction product, primarily methacrylic acid, can account for the acid loss or trapping effect observed by various researchers.

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“…As a result, the contact holes are shrunk by photoresist reflow. [2][3][4][5][6][7][8][9][10][11][12][13][14][15] The thermal flow process has the advantage of low cost and process simplicity. However, it is difficult to control CDs, because the amount of shrinkage of contact holes is influenced by the pattern layout.…”

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confidence: 99%

Comparison of Flow Models for Photoresist Behavior at Contact Holes in Thermal Flow Processes

Etô¹,

Miyazaki²,

Kondoh³

et al. 2007

J. Electrochem. Soc.

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The behavior of the photoresist between contact holes during the thermal flow process was investigated. When the photoresist width was smaller than 200 nm, the amount of shrinkage of the contact hole increased almost linearly with the photoresist width between contact holes. However, the amount of shrinkage was saturated and rarely changed with the photoresist width when the resist width was larger than 400 nm. We examined three models to investigate this phenomenon. The first one is the simple one-dimensional model, and the second one is the viscoelastic model with constant fluid viscosity. The third one is the viscoelastic model for the Bingham fluid. We calculated the amount of shrinkage of the contact hole vs the photoresist width, and the values calculated using the viscoelastic model for the Bingham fluid was consistent with the measured values. We also synthesized a contact-hole image by expanding this one-dimensional model to two dimensions. The average total hole radius error between the measured and the synthesized image was less than 7 nm, and the calculated image was almost the same as the measured one. We concluded that the viscoelastic model for the Bingham fluid is adequate for describing the photoresist behavior in the thermal flow process.

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Thermal phenomena in acrylic 193-nm resists

Cited by 4 publications

References 0 publications

Measurements of the Reaction−Diffusion Front of Model Chemically Amplified Photoresists with Varying Photoacid Size

Measurements of the Reaction−Diffusion Front of Model Chemically Amplified Photoresists with Varying Photoacid Size

Copolymer fraction effect on acid catalyzed deprotection reaction kinetics in model 193 nm photoresists

Comparison of Flow Models for Photoresist Behavior at Contact Holes in Thermal Flow Processes

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