Thermal properties of<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mtext>SmFeAsO</mml:mtext></mml:mrow><mml:mrow><mml:mn>1</mml:mn><mml:mo>−</mml:mo><mml:mi>x</mml:mi></mml:mrow></mml:msub><mml:msub><mml:mtext>F</mml:mtext><mml:mi>x</mml:mi></mml:msub></mml:mrow></mml:math>as a probe of the interplay between electrons and phonons

Tropeano, M.; Martinelli, A.; Palenzona, A.; Bellingeri, E.; d’Agliano, E. Galleani; Nguyen, Tung Lam; Affronte, Marco; Putti, M.

doi:10.1103/physrevb.78.094518

Cited by 48 publications

(59 citation statements)

References 45 publications

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“…C el and C ph are expressed as C el = γT and C ph = βT 3 at the low temperatures, where γ and β are electronic and phonon specific heat coefficients, respectively. As for the value of β, it is useful to refer to the result (β ∼ 0.36 mJ/mol K 4 ) of SmFeAs(O 1−x F x ) with the same structure [14,15]. We estimate the C mg of Sm 3+ f -moment for x = 0.075 by (C p − βT 3 )/T and calculate the corresponding entropy.…”

Section: B Resistivity and Seebeck Coefficientmentioning

confidence: 99%

Mott insulator to metal transition in filling-controlled SmMnAsO1−x

et al. 2011

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Transport and magnetic properties have been systematically investigated for SmMnAsO1−x with controlled electron-doping. As the electron band-filling is increased with the increase of oxygen deficiency (x), the resistivity monotonically decreases and the transition from Mott-insulator to metal occurs between x = 0.17 and 0.2. Seebeck coefficient at room temperature abruptly changes around the critical doping level from a large value (∼ −300 µV/K) to a small one (∼ −50 µV/K) both with negative sign. In the metallic compounds with x = 0.2 and x = 0.3, Mn spins order antiferromagnetically around 30 K, and the Hall coefficient with the negative sign shows a reduction in magnitude upon the magnetic transition, indicating the change in the multiple Fermi surfaces. Gigantic positive magnetoresistance effect is observed in a wide range of temperature, reaching up to 60 % at 2 K for the x = 0.3 compound. The effect is attributed to the field-induced change of the complex Fermi surfaces in this multi-orbital correlated electron system.

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Section: B Resistivity and Seebeck Coefficientmentioning

confidence: 99%

Mott insulator to metal transition in filling-controlled SmMnAsO1−x

et al. 2011

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“…Similar situation is found for SmFeAs(O 0.93 F 0.07 ). 28 Smaller j values in PrO 0.3 F 0.7 BiS 2 may represent the crystallographic disorder. An enhancement of j value above the superconducting temperature 5 K is due to the gap opening at the Fermi surface, followed by carrier condensation and consequent suppression of electron-phonon scattering.…”

Section: Introductionmentioning

confidence: 99%

Superconducting and magneto-transport properties of BiS2 based superconductor PrO1-xFxBiS2 (x = 0 to 0.9)

Jha

Kishan

Awana

2014

Journal of Applied Physics

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We report superconducting properties of PrO 1-x F x BiS 2 compounds, synthesized by the vacuum encapsulation technique. The synthesized PrO 1-x F x BiS 2 (x=0.1, 0.3, 0.5, 0.7 and 0.9) samples are crystallized in a tetragonal P4/nmm space group. Both transport and DC magnetic susceptibility measurements showed bulk superconductivity below 4 K. The maximum T c is obtained for x = 0.7 sample. Under applied magnetic field both T c onset and T c (ρ =0) decrease to lower temperatures. We estimated highest upper critical field [H c2 (0)] for PrO 0.3 F 0.7 BiS 2 sample to be above 4 T (Tesla). The thermally activated flux flow (TAFF) activation energy (U 0 ) is estimated 54.63 meV in 0.05 Tesla field for PrO 0.3 F 0.7 BiS 2 sample.Hall measurement results showed that electron charge carriers are the dominating ones in these compounds. Thermoelectric effects (Thermal conductivity and Seebeck coefficient) data suggest strong electron-electron correlations in this material.

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“…͑1͒. 7,18 Thus, this approximation is TЈ dTЈ between 17 and 160 K can be fitted well ͑solid lines in Fig. 3 and its inset͒.…”

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confidence: 99%

“…17 A reliable estimation of the phonon background, therefore, appears to be the key for the analysis of specific-heat data. Tropeano et al 18 and Baker et al, 7 fortunately, have demonstrated that such a non-Debye trend may be caused by a large Einstein contribution and a rather low Debye temperature T D . The normal-state specific heat, C p,n , was therefore proposed as,…”

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confidence: 99%

Evidence for multiple gaps in the specific heat of LiFeAs crystals

et al. 2010

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The zero-field specific heat of LiFeAs was measured on several single crystals selected from a bulk sample. A sharp ⌬C p / T c anomaly Ϸ20 mJ/ mole K 2 was observed. The value appears to be between those of SmFeAs͑O 0.9 F 0.1 ͒ and ͑Ba 0.6 K 0.4 ͒Fe 2 As 2 but bears no clear correlation with their Sommerfeld coefficients. The electronic specific heat below T c further reveals a two-gap structure with the narrower one only on the order of 0.7 meV. While the results are in rough agreement with the H c1 ͑T͒ previously reported on both LiFeAs and ͑Ba 0.6 K 0.4 ͒Fe 2 As 2 , they are different from the published specific-heat data of a ͑Ba 0.6 K 0.4 ͒Fe 2 As 2 single crystal.

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Thermal properties ofSmFeAsO1−xFxas a probe of the interplay between electrons and phonons

Cited by 48 publications

References 45 publications

Mott insulator to metal transition in filling-controlled SmMnAsO1−x

Mott insulator to metal transition in filling-controlled SmMnAsO1−x

Superconducting and magneto-transport properties of BiS2 based superconductor PrO1-xFxBiS2 (x = 0 to 0.9)

Evidence for multiple gaps in the specific heat of LiFeAs crystals

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