Subsurface H can affect catalytic
reactivity and selectivity. H
resurface and H2 recombination with a subsurface H on Ni(111)
were investigated by the quantum instanton method, and the arrangement,
surface coverage, lattice motion, and hot H effects were explored.
The arrangement effect of a surface H and a subsurface H varied the
H resurfacing rate constant by 57 times at 300 K. From the clean Ni(111)
to two H adsorbed Ni(111), the increase of surface coverage suppressed
the H resurfacing rate constant by four orders of magnitude at 300
K, whereas it increased the H penetration rate constant by about 10
times. The lattice motion effect was extremely remarkable for H resurface,
H penetration, and direct H2 recombination, which enhanced
the corresponding rate constants by about 10, 14, and 9 orders of
magnitude, respectively, at 300 K. The hot resurfacing H could speed
up H2 recombination by 140 times at 300 K. For the H2 recombination of a surface H and a subsurface H, the two-step
process was much faster than the direct process. In the two-step process,
H resurface was the rate-limiting step at extremely low temperatures
due to the frozen lattice, while the recombination of two surface
H atoms became the rate-limiting step as the lattice was relaxed with
increasing temperature.