Unique morphologies including a hemispherical dot and an inverse trapezoid line were fabricated from a mixture of zinc sulfide (ZnS) and silicon dioxide (SiO2) using thermal lithography. Depending on the laser power, three types of morphologies were formed for each of the dot and line patterns. The patterns were affected by the concentric heat transfer from the underlying light-absorption layer, and the transverse heat transfer caused by the spatial restriction. These unique morphologies are difficult to fabricate using photolithography, and they are therefore promising for new functional applications involving microscale structures.