1993
DOI: 10.1103/physrevb.47.11143
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Thermal relaxation of ion-irradiation damage in graphite

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Cited by 60 publications
(50 citation statements)
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“…We conclude that there are TSE centres in the graphene structure, where light can be produced as a result of electron transitions between localised states. Activation energy of the process is of the order of 1 eV, which is close to activation energy for defect relaxation in graphite [2]. In our opinion, relaxations of some kind of defects created in graphene layers by β-radiation can lead to TSE production.…”
Section: Introductionmentioning
confidence: 88%
See 1 more Smart Citation
“…We conclude that there are TSE centres in the graphene structure, where light can be produced as a result of electron transitions between localised states. Activation energy of the process is of the order of 1 eV, which is close to activation energy for defect relaxation in graphite [2]. In our opinion, relaxations of some kind of defects created in graphene layers by β-radiation can lead to TSE production.…”
Section: Introductionmentioning
confidence: 88%
“…• C is close to activation energy of disorder-induced D line decay (0.89 eV) obtained in Raman experiments with irradiated graphite [2]. The RXL maximum recorded at 205…”
Section: Discussionmentioning
confidence: 99%
“…[8] On the other hand, two such relaxation processes have also been reported for graphite irradiated with He+ ions [16]. According to the report, the fast and slow relaxation processes correspond to the vacancy-interstitial recombination and vacancy migration in the graphene plane, respectively, which have the activation energies of 0.89 eV and 1.8 eV.…”
Section: Figurementioning
confidence: 97%
“…As the previous analysis of the thermal relaxation kinetics of defects for graphite [16], the dependence of the R on annealing time for SWCNTs as shown in Fig. 3 was analyzed on the following three assumptions: (i) the I D /I G , or R is proportional to the density of defects in SWCNTs, (ii) some of the defects and others are annihilated by the fast and slow relaxation processes, respectively, and (iii) both processes occur independently.…”
Section: Analysis Of Recovery Of D Band By Themal Annealingmentioning
confidence: 99%
“…Os autores simularam feixes de CH + 3 e Ar + incidindo perpendicularmente na parede dos nanotubos (multiparede e/ou feixes (bundles)), onde foi observado que o produto destes impactos podem ser: moléculas adsorvidas nas paredes dos nanotubos; defeitos nas paredes dos tubos -vacâncias, interstício e pares de Frankel; e a formação de interconexões entre as paredes dos nanotubos através dos defeitos. Na mesma linha de pesquisa, simulações utilizando potenciais empíricos [41,[44][45][46][47][48][49][50][51] vêm sendo extensivamente estudadas para entender o processo de formação dos defeitos. Foram testadas diferentes fontes (He, N e, Ar, Kr e Xe), variando a intensidade do feixe, e investigado como os defeitos são formados e quaĺ e a densidade desses defeitos para cada configuração.…”
Section: Introductionunclassified